Fundamentals of Power Semiconductor Devices

B. Jayant Baliga (Autor)

Buch | Hardcover

1069 Seiten

2008 | 2008 ed.
Springer-Verlag New York Inc.
978-0-387-47313-0 (ISBN)

Infos

This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.

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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Inhalt

Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.

Produkt-Details

• Zusatzinfo: XXIII, 1069 p.
• Verlagsort: New York, NY
• Sprache: englisch
• Maße: 155 x 235 mm
• Gewicht: 3740 g
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• ISBN-10: 0-387-47313-0 / 0387473130
• ISBN-13: 978-0-387-47313-0 / 9780387473130
• Zustand: Neuware