Measurement and Modeling of Silicon Heterostructure Devices (eBook)

John D. Cressler (Autor)

eBook Download: PDF

2018
200 Seiten
CRC Press (Verlag)
978-1-4200-6693-7 (ISBN)

Infos

When you see a nicely presented set of data, the natural response is: "e;How did they do that; what tricks did they use; and how can I do that for myself?"e; Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Produkt-Details

• Erscheint lt. Verlag: 3.10.2018
• Sprache: englisch
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Umwelttechnik / Biotechnologie
• ISBN-10: 1-4200-6693-5 / 1420066935
• ISBN-13: 978-1-4200-6693-7 / 9781420066937