Measurement and Modeling of Silicon Heterostructure Devices
Seiten
2007
Crc Press Inc (Verlag)
978-1-4200-6692-0 (ISBN)
Crc Press Inc (Verlag)
978-1-4200-6692-0 (ISBN)
Focuses on measurement and modeling of high-speed conductor devices. This book provides experience-based tricks of the trade and the subtle nuances of measuring and modeling. It covers topics including compact modeling using integrated CAD tools and design kits, noise mitigation approaches, Germanium RF designs, and, transmission lines.
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Georgia Institute of Technology, Atlanta, USA
Overview: Measurement and Modeling. Best-Practice AC Measurement Techniques. Industrial Application of TCAD for SiGe Development. Compact Modeling of SiGe HBTs: HICUM. Compact Modeling of SiGe HBTs: Mextram. CAD Tools and Design Kits. Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs. Transmission Lines on Si. Improved De-Embedding Techniques.
| Zusatzinfo | 14 Tables, black and white; 9 Halftones, black and white; 95 Illustrations, black and white |
|---|---|
| Verlagsort | Bosa Roca |
| Sprache | englisch |
| Maße | 178 x 254 mm |
| Gewicht | 498 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Umwelttechnik / Biotechnologie | |
| ISBN-10 | 1-4200-6692-7 / 1420066927 |
| ISBN-13 | 978-1-4200-6692-0 / 9781420066920 |
| Zustand | Neuware |
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