International Conference on Ion Implantation Technology
Elsevier Science Ltd (Verlag)
978-0-444-82194-2 (ISBN)
- Titel ist leider vergriffen;
keine Neuauflage - Artikel merken
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Part 1 Section i - advanced implanters and process control - invited papers - ion implantation from the past and into the future, S. Moffatt; negative-ion implantation technique, J. Ishikawa et al; charge neutralization in ion implanters, D.L. Smatlak et al; section ii - profiles and modelling - invited papers - on the determination of two-dimensional carrier distributions, W. Vandervorst et al; improved delineation technique for two dimensional dopant profiling, L. Gong et al; section iii - materials science - silicon - invited papers - implantation and transient boron diffusion - the role of the silicon self-interstital, P.A. Stolk et al; studies of point defect/dislocation loop interaction processes in silicon, K.S. Jones et al; on the relation between dopant anomalous diffusion in si and end-of-range defects, A. Claverie et al; section iv - materials science - compounds and alloys - invited papers - ion-beam induced relaxation of strained GexSi1-x layers, P. Kringhoj et al; thermodynamic behaviour of GeO2 formed by oxygen implantation into relaxed Si0.5 alloy, J.P. Zhang et al; section v - materials science - silicides - invited paper - ion beam synthesis of yttrium silicides in (111)Si, S. Jin et al; section vi - materials science -optoelectronics - invited paper - ion implantation for optical applications, Buchal; section vii - new applications in processing and devices - invited paper - application of advanced ion implantation techniques to flash memories, P. Cappelletti et al. Part 2 Section i - advanced implanter systems; section ii - subsystems and components; section iii - process control; section iv - ion-solid interactions; section v - materials science - silicon; section vi - materials science - alloys and compounds; section vii - materials science - silicides; section viii - new applications in processing and devices.
| Zusatzinfo | index |
|---|---|
| Verlagsort | Oxford |
| Sprache | englisch |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| ISBN-10 | 0-444-82194-5 / 0444821945 |
| ISBN-13 | 978-0-444-82194-2 / 9780444821942 |
| Zustand | Neuware |
| Haben Sie eine Frage zum Produkt? |
aus dem Bereich
