The Physics of Semiconductor Devices (eBook)

Proceedings of IWPSD 2017

R. K. Sharma, D.S. Rawal (Herausgeber)

eBook Download: PDF

2019 | 2019
LVII, 1299 Seiten
Springer International Publishing (Verlag)
978-3-319-97604-4 (ISBN)

Infos

This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Inhalt

Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot – Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.

Produkt-Details

• Erscheint lt. Verlag: 31.1.2019
• Reihe/Serie: Springer Proceedings in Physics
• Reihe/Serie: Springer Proceedings in Physics
• Zusatzinfo: LVII, 1299 p. 824 illus., 656 illus. in color.
• Verlagsort: Cham
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Schlagworte: compound semiconductors • Crystal growth, epitaxy and characterization • Graphene and 2D materials • III-Nitrides materials and devices • IWPSD 2017 • Semiconductors for quantum computing • VLSI technology
• ISBN-10: 3-319-97604-4 / 3319976044
• ISBN-13: 978-3-319-97604-4 / 9783319976044