Vapour Growth and Epitaxy (eBook)

Proceedings of the Third International Conference on Vapour Growth and Epitaxy, Amsterdam, The Netherlands, 18-21 August 1975

G.W. Cullen, E. Kaldis, R.L. Parker (Herausgeber)

eBook Download: PDF

2013 | 1. Auflage
410 Seiten
Elsevier Science (Verlag)
978-1-4832-2357-5 (ISBN)

Infos

Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.

Inhalt

Front Cover 1
Vapour Growth and Epitaxy 4
Copyright Page 3
Table of Contents 10
PREFACE 8
SECTION I: GROWTH OF SINGLE CRYSTALS FROM THE VAPOUR PHASE 12
CHAPTER 1. CRYSTAL GROWTH FROM THE VAPOUR PHASE: CONFRONTATION OF THEORY WITH EXPERIMENT 14
1. Introduction 14
2. Statistical step and surface models 15
3. Continuous step growth models 19
4. Experimental confrontation 22
References 29
CHAPTER 2. FUNDAMENTAL ASPECTS OF VLS GROWTH 31
1. Introduction 31
2. Kinetics of whisker growth 31
3. Rate-determining step 35
4. Role of the liquid phase 37
5. The VLS mechanism as a general phenomenon in vapor crystal growth 39
6. Conclusions 40
Acknowledgments 40
References 40
CHAPTER 3. COMPLEXES IN THE VAPOUR PHASE AND THEIR IMPLICATIONS FOR VAPOUR GROWTH 42
1. Introduction 42
2. Dimeric chloride molecules (homeocomplexes) 43
4. Larger heterocomplexes 43
5. Gas complexes as reactants 45
References 45
CHAPTER 4. CRYSTAL GROWTH AND TRANSPORT RATES OF GeSe AND GeTe IN MICRO-GRAVITY ENVIRONMENT 47
1. Introduction 47
2. Experimental procedures on Skylab 47
3. Results and discussion 48
4. Conclusions 54
Acknowledgements 54
References 54
CHAPTER 5. STRUCTURE OF AUTOEPITAXIAL DIAMOND FILMS 55
1. Introduction 55
2. Experimental technique 55
3. Discussion 57
Acknowledgement 58
References 59
CHAPTER 6. DARSTELLUNG VON VO2-EINKRISTALLEN DER OBEREN UND UNTEREN PHASENGRENZE DURCH CHEMISCHEN TRANSPORT 60
1. Einleitung 60
2. Der Transport von VO2 mit TeCl4 um 1000°C 61
3. Zum Transport von VO2 mit TeCI4 unterhalb 700°C 63
4. Der Transport von V02 mit HCl 65
5. Schlussfolgerungen 65
Literatur 65
CHAPTER 7. THE MORPHOLOGY OF Zn3P2 SINGLE CRYSTALS GROWN FROM THE VAPOUR PHASE 67
1. Introduction 67
2. Experimental procedure 67
3. Results and discussion 68
Acknowledgment 70
References 70
CHAPTER 8. MORPHOLOGY OF CHEMICAL VAPOR DEPOSITED TITANIUM DIBORIDE 71
1. Introduction 71
2. Experimental procedure 71
3. Results 72
4. Discussion 75
Acknowledgements 76
References 76
CHAPTER 9. A MODEL FOR THE GROWTH OF ANOMALOUS POLYTYPE STRUCTURES IN VAPOUR GROWN SiC 77
1. Introduction 77
2. The most probable fault configurations 78
3. Deduction of the most probable series of structures 80
4. Discussion of results 81
Acknowledgement 81
References 81
CHAPTER 10. EPITAXIAL GROWTH OF a-SiC LAYERS BY CHEMICAL VAPOR DEPOSITION TECHNIQUE 83
1. Introduction 83
2. Experimental procedures 83
3. Results and discussion 84
Acknowledgments 86
References 86
SFXTION II: NUCLEATION AND KINETICS 88
CHAPTER 11. HOMOGENEOUS NUCLEATION IN A FREE ARGON JET OBSERVATION OF CLUSTERS BY ELECTRON DIFFRACTION
1. Introduction 90
2. Homogeneous nucleation in a free jet 90
3. Electron diffraction 94
4. Thermodynamic state of the clusters 96
Acknowledgements 96
References 96
CHAPTER 12. THERMODYNAMICS AND KINETICS OF THE FIRST MONOLAYER ADSORPTION OF XENON ON THE (0001) GRAPHITE FACE 98
1. Introduction 98
2. Thermodynamic properties of xenon adsorbed on graphite 98
3. Kinetics 98
4. Interpretation 101
References 102
CHAPTER 13. MODIFICATIONS OF EPITAXY IN EVAPORATED FILMS BY ELECTRIC CHARGE EFFECTS 103
1. Introduction 103
2. Experimental procedure 103
3. Experimental results 104
4. Discussion 107
References 108
CHAPTER 14. DECOMPOSITION OF METHANE ON A HOT CARBON SURFACE AFTER MULTIPLE COLLISIONS 109
1. Introduction 109
2. Experiment and results 109
4. Application of the models to the experimental results 110
5. Conclusions 111
Acknowledgement 111
References 111
CHAPTER 15. FORMATION AND PROPERTIES OF TRANSITION LAYERS IN EPITAXIAL FILMS 114
1. Introduction 114
2. Formation of a transition layer under a substrate influence 115
3. Transition layers caused by peculiarities of growth processes 117
4. Transition layers caused by changes in the initial vapour phase 119
5. Ways to diminish transition layers 121
References 122
CHAPTER 16. EPITAXY IN SOLAR CELLS 124
1. Introduction 124
2. Solar cells are semiconductor diodes 124
3. Applications of epitaxial growth 127
4. Conclusion 131
Acknowledgments 131
References 131
CHAPTER 17. KINETIC STUDIES OF THE GROWTH OF III-V COMPOUNDS USING MODULATED MOLECULAR BEAM TECHNIQUES 133
1. Introduction 133
2. Experimental methods in modulated molecular beam studies of surface kinetics 133
3. Results and kinetic models from the application of modulated beam techniques to the study of surface processes in the growth of III—V compounds 135
4. Conclusions 140
References 140
CHAPTER 18. KINETIC ASPECTS IN THE VAPOUR PHASE EPITAXY OF III-V COMPOUNDS 141
1. Introduction 141
2. Thermodynamic analyses 142
3. Kinetic data 143
4. Models and mechanisms 148
References 151
CHAPTER 19. A THEORETICAL TREATMENT OF GaAs GROWTH BY VAPOUR PHASE TRANSPORT FOR {001} ORIENTATION 153
1. Introduction 153
2. Rate processes 153
3. Theoretical results 154
4. Discussion 156
Acknowledgements 157
References 157
CHAPTER 20. HETEROEPITAXIAL GROWTH OF GaP ON SILICON 158
1. Introduction 158
2. Experimental 158
3. Results and discussion 159
4. Summary 167
CHAPTER 21. EPITAXIAL GROWTH ON OPTICAL GRATINGS FOR DISTRIBUTED FEEDBACK GaAs INJECTION LASERS 169
1. Introduction 169
2. Experimental 170
3. Results 171
4. Conclusions 174
Acknowledgments 175
References 175
CHAPTER 22. GROWTH AND CHARACTERIZATION OF GaAs1 AND GaAsx1 _.P. 176
1. Introduction 176
2. Experimental 176
3. Results and discussion 177
4. Conclusions 181
Acknowledgements 182
References 182
CHAPTER 23. DEVICE QUALITY EPITAXIAL GALLIUM ARSENIDE GROWN BY THE METAL ALKYL-HYDRIDE TECHNIQUE 183
1. Introduction 183
2. Experimental technique 183
3. Growth conditions, growth rates and surface morphology 184
4. Electrical properties of undoped layers 185
5. n-Type doping 186
6. Multilayer structures for Schottky barrier GaAs FET's 187
7. p-Type doping 187
8. Discussion 188
Acknowledgements 188
References 189
CHAPTER 24. RATE DETERMINING PROCESSES OF GASEOUS TRANSPORT IN A Ga-As-Cl CLOSED TUBE SYSTEM 190
1. Introduction 190
2. Theoretical consideration 190
3. Comparison with experiments and discussion 192
Acknowledgements 193
References 193
CHAPTER 25. DOPING BEHAVIOR OF SILICON IN VAPOR-GROWN III-V EPITAXIAL FILMS 194
1. Introduction 194
2. Experimental 196
3. Results 196
4. Discussion 197
5. Conclusion 200
Acknowledgments 200
References 200
CHAPTER 26. MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM PHOSPHIDE 201
1. Introduction 201
2. Experimental 201
3. Results 203
4. Multilayered structures 204
5. Discussion 206
6. Summary 206
Acknowledgements 207
References 207
CHAPTER 27. HIGH PRESSURE SOLUTION GROWTH OF GaN+ 208
1. Introduction 208
2. Apparatus and procedures 209
3. Results and discussion 210
4. Conclusion 213
Acknowledgments 213
References 213
CHAPTER 28. ÉPITAXIE EN PHASE LIQUIDE DES COMPOSÉS III-V SUR SUBSTRAT InP 215
1. Introduction 215
2. Resultats 215
3. Conclusion 219
Remerciements 220
Bibliographie 220
CHAPTER 29. ON THE KINETICS OF NITROGEN INCORPORATION IN GaP LPE LAYERS USING NH3 VAPOUR DOPING 221
1. Introduction 221
2. Experimental 221
3. Results 222
4. Discussion 223
5. Conclusions 224
Acknowledgement 225
References 225
CHAPTER 30. NEARLY PERFECT CRYSTAL GROWTH OF III-V COMPOUNDS BY THE TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOUR PRESSURE 226
1. Introduction 226
2. Experiment 226
3. Results 227
4. Discussion and conclusion 232
Acknowledgements 233
References 233
CHAPTER 31. INTERFACIAL LATTICE MISMATCH EFFECTS IN III-V COMPOUNDS 234
1. Introduction 234
2. Microstructural effects of lattice mismatch 234
3. Macrostructural effects of lattice mismatch 244
4. Device effects of lattice mismatch 247
5. Conclusions 249
Acknowledgments 249
References 249
CHAPTER 32. CHARACTERIZATION OF THE INTERFACE REGION IN VPE GaAs 251
1. Introduction 251
2. Experimental techniques 251
3. Experimental results 252
4. Discussion 253
5. Conclusions 254
Acknowledgements 254
References 254
CHAPTER 33. CHARACTERIZATION OF DEFECTS IN GaP and GaAsP GRADED HETEROJUNCTIONS BY TRANSMISSION ELECTRON MICROSCOPY 255
1. Introduction 255
2. Graded heterojunctions GaAs1_xPx 255
3. Defects in GaP 257
Acknowledgements 260
References 260
CHAPTER 34. CHARACTERIZATION OF VAPOR GROWN (001) GaAs1_xPx LAYERS BY SELECTIVE PHOTO-ETCHING 261
1. Introduction 261
2. Materials and etching procedure 261
3. Results 262
Acknowledgements 266
References 266
CHAPTER 35. EQUILIBRIUM AND KINETICS IN THE CHEMICAL VAPOUR DEPOSITION OF SILICON 267
1. Introduction 267
2. Equilibrium considerations 267
3. Input concentrations 268
4. Kinetic considerations 269
5. Examples 270
6. Doping 270
7. Conclusion 272
References 273
CHAPTER 36. INELASTIC LIGHT SCATTERING STUDIES OF SILICON CHEMICAL VAPOR DEPOSITION (CVD) SYSTEMS 275
1. Introduction 275
2. Inelastic light scattering processes 276
3. Experimental apparatus and procedures 277
4. Results and discussion 279
5. Conclusions 283
Acknowledgements 283
References 283
CHAPTER 37. THE EFFECT OF RAPID EARLY GROWTH ON THE PHYSICAL AND ELECTRICAL PROPERTIES OF HETEROEPITAXIAL SILICON 285
1. Introduction 285
2. Experimental procedure 285
3. Results 288
4. Discussion 292
5. Conclusions 294
Acknowledgments 294
References 294
CHAPTER 38. THE CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR DEPOSITION OF SILICON FROM SiCl4 295
1. Introduction 295
2. Experimental and results 295
Acknowledgements 299
References 299
CHAPTER 39. ANISOTROPY IN THE GROWTH RATES OF SILICON DEPOSITED BY REDUCTION OF SILICON TETRACHLORIDE 301
1. Introduction 301
2. Experimental procedure 302
3. Results and discussion 302
4. Conclusions 309
References 309
CHAPTER 40. GROWTH AND ETCHING OF SILICON IN CHEMICAL VAPOUR DEPOSITION SYSTEMS THE INFLUENCE OF THERMAL DIFFUSION AND TEMPERATURE GRADIENT
1. Introduction 310
2. The equilibrium composition as a function of PsiCl4 (in Put) 310
3. Conclusion 316
Acknowledgement 317
References 318
CHAPTER 41. CONTROL OF SLIP IN HORIZONTAL SILICON EPITAXY WITH PROFILED SUSCEPTORS 319
1. Introduction 319
2. Principles of design 319
References 322
CHAPTER 42. SELECTIVE ETCHING AND EPITAXIAL REFILLING OF SILICON WELLS IN THE SYSTEM SiH4/HCl/H2 323
1. Introduction 323
2. Experimental, results 323
3. Discussion 326
Acknowledgement 327
References 327
CHAPTER 43. THE INCORPORATION OF PHOSPHORUS IN SILICON THE TEMPERATURE DEPENDENCE OF THE SEGREGATION COEFFICIENT
1. Introduction, justification of equilibrium model 328
2. Analysis 329
3. Comparison with theoretical expressions 331
4. Conclusion 332
References 332
CHAPTER 44. VAPOUR PHASE EPITAXY OF II-VI COMPOUNDS: A REVIEW 334
1. Introduction 334
2. Epitaxy techniques and trends 334
3. Layer growth and epitaxy 336
4. Crystal structure 340
5. Physical properties 341
6. Conclusion 343
Acknowledgements 343
References 343
CHAPTER 45. SYNTHESIS AND EPITAXIAL GROWTH OF CdTe FILMS BY NEUTRAL AND IONIZED BEAMS 344
1. Introduction 344
2. Experimental apparatus and procedure 344
3. Experimental results and discussion 346
4. Epitaxy of CdTe films on NaCl cleavage faces 348
5. Conclusion 349
References 349
CHAPTER 46. THE EPITAXIAL GROWTH OF THICK SMOOTH FILMS OF ZnS ON GaAs 350
1. Introduction 350
2. Growth procedure 350
3. Growth characteristics 351
4. The effect of growth conditions on the Si concentration in the layers 354
5. Discussion 355
6. Conclusion 355
Acknowledgements 355
References 355
CHAPTER 47. GROWTH MECHANISM AND STRUCTURE OF ADSORBED LAYERS ON METALS 356
1. Introduction 356
2. Coincidence mesh structures 356
3. Structure with no coincidence mesh (epitaxy of lead on gold) 360
References 363
CHAPTER 48. EPITAXIAL GROWTH IN THE (111)Ag/Cu AND (111)Au/Cu SYSTEMS 364
1. Introduction 364
2. Results 364
3. Discussion 367
Acknowledgement 368
References 368
CHAPTER 49. LIQUID PHASE EPITAXY OF MAGNETIC GARNETS 369
1. Introduction 369
2. Background 369
3. Design of magnetic bubble film compositions 370
4. Fluxed-melts for LPE garnet films 371
5. Garnet LPE 372
6. Future 375
Acknowledgements 375
References 375
CHAPTER 50. LPE GROWTH OF YLaTm AND YLaEu GARNET FILMS 377
1. Introduction 377
2. Experimental 377
3. Results 378
4. Growth kinetics 380
5. Discussion 380
6. Conclusions 381
Acknowledgments 381
References 381
CHAPTER 51. NEW FLUX SYSTEMS FOR THE LPE GROWTH OF THIN GARNET FILMS 382
1. Introduction 382
2. The flux requirements 382
3. Film growth 383
4. Results and discussion 384
5. Conclusions 385
Acknowledgements 385
References 385
CHAPTER 52. A NEW METHOD OF STIRRING FOR LPE GROWTH 386
1. Introduction 386
2. Design criteria 387
3. Apparatus 388
4. Results and discussion 389
5. Conclusions 390
References 390
CHAPTER 53. THERMALLY ACTIVATED STRESS RELIEF IN GARNET LAYERS GROWN BY LIQUID PHASE EPITAXY 391
1. Introduction 391
2. Experimental details 391
3. Results 392
4. Discussion 396
5. Conclusions 397
Acknowledgements 397
References 397
CHAPTER 54. SECONDARY ION MASS SPECTROMETRY OF COMPOSITIONAL CHANGES IN GARNET FILMS 398
1. Introduction 398
2. Experimental 398
3. Results and discussion 400
4. Conclusion 402
Acknowledgements 402
References 402
AUTHOR INDEX 404

Produkt-Details

• Erscheint lt. Verlag: 3.9.2013
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Chemie
• Themenwelt: Naturwissenschaften ► Geowissenschaften ► Mineralogie / Paläontologie
• Themenwelt: Technik
• ISBN-10: 1-4832-2357-4 / 1483223574
• ISBN-13: 978-1-4832-2357-5 / 9781483223575