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Silicon Heterostructure Devices - John D. Cressler

Silicon Heterostructure Devices

Buch | Hardcover
466 Seiten
2007
Crc Press Inc (Verlag)
978-1-4200-6690-6 (ISBN)
CHF 179,95 inkl. MwSt
Highlights silicon-based heterostructure devices and divides them into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. This book covers topics including device physics, broadband noise, performance limits, reliability, and engineered substrates.
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Georgia Institute of Technology, Atlanta, USA

The Big Picture. A Brief History of the Field. SiGe HBTs. Heterostructure FETs. Other Heterostructure Devices. Optoelectronic Components. Appendices.

Erscheint lt. Verlag 8.1.2008
Zusatzinfo 8 Tables, black and white; 32 Halftones, black and white; 302 Illustrations, black and white
Verlagsort Bosa Roca
Sprache englisch
Maße 178 x 254 mm
Gewicht 929 g
Themenwelt Technik Elektrotechnik / Energietechnik
Technik Umwelttechnik / Biotechnologie
ISBN-10 1-4200-6690-0 / 1420066900
ISBN-13 978-1-4200-6690-6 / 9781420066906
Zustand Neuware
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