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Ferroelectricity in Doped Hafnium Oxide

Materials, Properties and Devices

Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo (Herausgeber)

Buch | Softcover

850 Seiten

2025 | 2nd edition
Woodhead Publishing (Verlag)
978-0-443-29182-1 (ISBN)

Noch nicht erschienen (ca. Juni 2025)
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The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, neuromorphic applications, IR sensors, energy storage and harvesting, and solid-state cooling. This book covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials. Finally, HfO2-based devices are summarized.

The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behaviour; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications

Uwe Schroeder has been Deputy Scientific Director at NaMLab in Dresden, Germany, since 2009. His primary research focuses include material properties of ferroelectric hafnium oxide and the integration of the material into future devices. As a project manager, he researched high-k dielectrics and their integration into DRAM capacitors, and it was during this work that the previously unknown ferroelectric properties of doped HfO2-based dielectrics were discovered. He has focused on a detailed understanding of these new material properties and their integration into memory devices ever since. Cheol Seong Hwang has been a Professor in the Department of Materials Science and Engineering at Seoul National University, Korea, since 1998. He is a recipient of the Alexander von Humboldt fellowship award, the 7th Presidential Young Scientist Award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, and thin-film transistors. Hiroshi Funakubo is a Professor of the Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, Japan. He received the Richard M. Fulrath Award from the American Ceramic Society in 2008. His specific areas of interest include the preparation and properties of dielectric, ferroelectric, and piezoelectric films.

1. Fundamentals of Ferroelectric and Piezoelectric Properties
2. Structures, Phase Equilibria, and Properties of HfO2
3. Ferroelectricity in Doped HfO2: Causes and Dependencies
4. Growth
5. Simulation
6. Polarization of Condensed Matter
7. Electrical Behavior: Switching, Cycling, Retention
8. Ferroelectric Hafnium Oxide-Based Applications

Erscheint lt. Verlag	1.6.2025
Reihe/Serie	Woodhead Publishing Series in Electronic and Optical Materials
Sprache	englisch
Maße	152 x 229 mm
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
ISBN-10	0-443-29182-9 / 0443291829
ISBN-13	978-0-443-29182-1 / 9780443291821
Zustand	Neuware