Sub-Micron Semiconductor Devices
CRC Press (Verlag)
978-0-367-64810-7 (ISBN)
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.
The book:
Covers novel semiconductor devices with submicron dimensions
Discusses comprehensive device optimization techniques
Examines conceptualization and modeling of semiconductor devices
Covers circuit and sensor-based application of the novel devices
Discusses novel materials for next-generation devices
This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST, ISRO and many more projects. Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog CMOS integrated Circuits, Nano scale Device design and simulation etc. Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.
Chapter 1 Fundamental Phenomena in Nanoscale Semiconductor Devices
Zeinab Ramezani and Arash Ahmadivand
Chapter 2 Recent Advancements in Growth and Stability of Phosphorene:
Prospects for High-Performance Devices
Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, and Amitesh Kumar
Chapter 3 Study of Transition Metal Dichalcogenides in Junctionless
Transistors and Effect of Variation in Dielectric Oxide
Prateek Kumar, Maneesha Gupta, Kunwar Singh, and Ashok Kumar Gupta
Chapter 4 GNRFET-Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects
Afreen Khursheed and Kavita Khare
Chapter 5 An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter
Katyayani Bhardwaj, Aryan, and R.K. Yadav
Chapter 6 Recent Trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water
Avik Sett, Monojit Mondal, Santanab Majumder, and Tarun Kanti Bhattacharyya
Chapter 7 Vertical Tunnel FET Having Dual MOSCAP Geometry
Vandana Devi Wangkheirakpam, Brinda Bhowmick, and Puspa Devi Pukhrambam
Chapter 8 Leakage Current and Capacitance Reduction in CMOS Technology
Ajay Somkuwar and Laxmi Singh
Chapter 9 Design of Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance
Navaneet Kumar Singh, Rajib Kar, and Durbadal Mandal
Chapter 10 Solving Schrodinger’s Equation for Low-Dimensional Nanostructures for Understanding Quantum Confinement Effects
Amit Kumar
Chapter 11 Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD Tool
Remya Jayachandran, Rama S. Komaragiri, and K. J. Dhanaraj
Chapter 12 NEGF Method for Design and Simulation Analysis of Nanoscale MOS Devices
Chhaya Verma and Jeetendra Singh
Chapter 13 Performance Investigation of a Novel Si/Ge Heterojunction Asymmetric Double-Gate DLTFET for Low-Power Analog/RF and IoT Applications
Suruchi Sharma, Rikmantra Basu, and Baljit Kaur
Chapter 14 Synthesis of Graphene Nanocomposites Toward the Enhancement of Energy Storage Performance for Supercapacitors
Monojit Mondal, Avik Sett, Dipak Kumar Goswami, and Tarun Kanti Bhattacharyya
Chapter 15 Design and Analysis of Dopingless Charge-Plasma-Based Ring Architecture of Tunnel Field-Effect Transistor for Low-Power Application
Ashok Kumar Gupta, Ashish Raman, Naveen Kumar, Deep Shekhar, and Prateek Kumar
Chapter 16 Hybrid Intelligent Technique-Based Doping Profile Optimization in a Double-Gate Hetero-Dielectric TFET
Sagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, and Koushik Guha
Chapter 17 Graphene Nanoribbon Devices: Advances in Fabrication and Applications
Juan M. Marmolejo-Tejada, Jaime Velasco-Medina, and Andres Jaramillo-Botero
Chapter 18 Design and Analysis of Various Neural Preamplifier Circuits
Swagata Devi, Koushik Guha, and Krishna Lal Baishnab
Chapter 19 Design and Analysis of Transition Metal Dichalcogenide-Based Feedback Transistor
Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, and Naveen Kumar
Chapter 20 Reduced Graphene-Metal Phthalocyanine-Based Nanohybrids for Gas-Sensing Applications
Aman Mahajan and Manreet Kaur Sohal
Chapter 21 Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications
Ramesh Rathinam, Adhithan Pon, and Arkaprava Bhattacharyya
Chapter 22 Analytical Modeling of Reconfigurable TransistorsRanjith Rajan, Suja Krishnan Jagada, and Rama S. Komaragiri
Chapter 23 Flexi-Grid Technology: A Necessity for Spectral Resource Utilization
Divya Sharma, Shivam Singh, Anurag Upadhyay, and Sofyan A. Taya
| Erscheinungsdatum | 12.09.2024 |
|---|---|
| Zusatzinfo | 47 Tables, black and white; 214 Line drawings, black and white; 13 Halftones, black and white; 227 Illustrations, black and white |
| Verlagsort | London |
| Sprache | englisch |
| Maße | 178 x 254 mm |
| Gewicht | 757 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Maschinenbau | |
| Technik ► Umwelttechnik / Biotechnologie | |
| ISBN-10 | 0-367-64810-5 / 0367648105 |
| ISBN-13 | 978-0-367-64810-7 / 9780367648107 |
| Zustand | Neuware |
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