New Developments in Semiconductor Research
Seiten
2005
Nova Science Publishers Inc (Verlag)
978-1-59454-575-7 (ISBN)
Nova Science Publishers Inc (Verlag)
978-1-59454-575-7 (ISBN)
Contains studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; and interface properties. This book also includes aspects of surface science such as, the influence of growth kinetics and chemical processing on layer and device properties.
This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir-Blodgett films; resists, lithography and metalisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package-related failure mechanisms; effects of operational and environmental stresses on reliability.
This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir-Blodgett films; resists, lithography and metalisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package-related failure mechanisms; effects of operational and environmental stresses on reliability.
Preface. Designing of Vertical-Cavity Surface-Emitting Semiconductor Lasers for Modern Long-Wavelength Optical-Fibre Communication Systems; Nitride Vertical-Cavity Surface-Emitting Diode Lasers: Problems to be Solved; Electrical Properties of Inhomogeneous Schottky Diodes; Theory of Internal Photoemission in Heterojunctions and the Characterisation of Long Wavelength SiGe/Si Hip Infrared Photodetectors; Interface Heterobond Effects in (hkl) InAs/GaSb Superlattices Solved by Modified bond Orbital Model; Growth and Non-Destructive Characterization of Cd1-xZn-xTe Crystals Grown by a Modified Vertical Bridgman Method; Growth of Superconducting and CMR Perovskite Oxides on 'Silicons on Insulator' Substrates; Index.
| Erscheint lt. Verlag | 18.7.2005 |
|---|---|
| Zusatzinfo | Illustrations |
| Verlagsort | New York |
| Sprache | englisch |
| Maße | 260 x 180 mm |
| Gewicht | 704 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| ISBN-10 | 1-59454-575-8 / 1594545758 |
| ISBN-13 | 978-1-59454-575-7 / 9781594545757 |
| Zustand | Neuware |
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