Modern Semiconductor Quantum Physics
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-02-1599-6 (ISBN)
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Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasi-particles; LCAO method; k.p method; spin-orbit splitting; effect mass and Luttinger parameters; strain effects and deformation potentials; temperature effects. (2) Optical properties: absorption and exciton effect; modulation spectroscopy; photo luminescence and photo luminescence excitation; Raman scattering and polaritons; photoionization. (3) Defects and Impurities: effective mass theory and shallow impurity states; deep state cluster method, super cell method,Green's function method; carrier recombination kinetics; trapping transient measurements; electron spin resonance; electron lattice interaction and lattice relaxation effects; multi-phonon nonradiative recombination; negative U center, DX center and EL2 Defects. (4) Semiconductor surfaces: two dimensional periodicity and surface reconstruction; surface electronic states; photo-electron spectroscopy; LEED, STM and other experimental methods. (5) Low-dimensional structures: Heterojunctions, quantum wells; superlattices, quantum-confined Stark effect and Wannier-Stark ladder effects; resonant tunneling, quantum Hall effect, quantum wires and quantum dots.This book can be used as an advanced textbook on semiconductor physics for graduate students in physics and electrical engineering departments. It is also useful as a research reference for solid state scientists and semiconductor device engineers.
Part I Perfect crystal semiconductors: 1a - energy band theory - pseudopotential method empirical, self-consistent, quasi-particle; LCAO method; k.p method spin-orbit splitting effect; alloy semiconductors; stress effect; temperature effect. 1b - Optical properties - absorption and exciton effect; photo luminescence and photo luminescence excitation; modulation spectroscopy; Raman scattering and polaritons. Part 2 Non-perfect crystal semiconductors: 2a - defects in semiconductors - effective mass shallow impurity states; deep defect states, cluster method, super cell method and Green's function methods; emission and capture and transcient experiments; electron spin resonance methods; electron lattice interation and lattice relaxation effects; negative U centers multi-phonon non-radiative transition; DX center and EL2 defects. 2b - Semiconductor surfaces - two dimensional periodicity and surface reconstruction; surface states; photo-electron spectroscopy; LEED, STM and other experimental methods. 2c - Heterojunctions, quantum wells and superlattices, quantum wires and quantum dots, quantum hall effects, new phenomena and new devices due to quantum confinement effects.
| Erscheint lt. Verlag | 1.2.1995 |
|---|---|
| Reihe/Serie | International Series On Advances In Solid State Electronics And Technology |
| Verlagsort | Singapore |
| Sprache | englisch |
| Themenwelt | Naturwissenschaften ► Chemie ► Physikalische Chemie |
| Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik | |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 981-02-1599-1 / 9810215991 |
| ISBN-13 | 978-981-02-1599-6 / 9789810215996 |
| Zustand | Neuware |
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