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Assessment and Application of Defect Characterization via Lifetime Spectroscopy in High Purity C-Si

(Autor)

Buch | Softcover
174 Seiten
2023
Fraunhofer Verlag
978-3-8396-1917-9 (ISBN)

Lese- und Medienproben

Assessment and Application of Defect Characterization via Lifetime Spectroscopy in High Purity C-Si - Regina Post
CHF 117,60 inkl. MwSt
The performance limit of monocrystalline silicon solar cells is almost reached. Onlymarginal effects are limiting the excess carrier lifetime of nowadays used materials.Nonetheless it is interesting to investigate and characterize the limiting effects toimprove the performance even further and to deepen the understanding, enabling newapproaches and novel cell structures.
This thesis tries to characterize limiting defect in high standard Gallium doped siliconvia lifetime spectroscopy. To assess the validity of the results, the limits of thiscommonly used method (lifetime spectroscopy) are analyzed by evaluation of simulatedlifetime data. Further, a guideline for future lifetime evaluations is given which canimprove the outcome of the complex evaluation and helps differentiate between bulkand surface effects.
Erscheinungsdatum
Reihe/Serie Solare Energie- und Systemforschung / Solar Energy and Systems Research
Zusatzinfo num., mostly col. illus. and tab.
Verlagsort Stuttgart
Sprache englisch
Maße 148 x 210 mm
Themenwelt Technik Maschinenbau
Technik Umwelttechnik / Biotechnologie
Schlagworte B • Carrier Lifetime • Gallium Doping • Ingenieure, Forscher, Wissenschaftler • Lifetime spectroscopy • Photovoltaics • Semiconductor physics
ISBN-10 3-8396-1917-3 / 3839619173
ISBN-13 978-3-8396-1917-9 / 9783839619179
Zustand Neuware
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