III-Nitride LEDs
Springer Verlag, Singapore
978-981-19-0438-7 (ISBN)
Dr. Shengjun ZhouShengjun Zhou received his Ph.D. degree from Shanghai Jiao Tong University, China in 2011. He is currently full Professor at Wuhan University, China. He was Research Fellow at the University of Michigan, Ann Arbor during 2014 and 2015. His research focuses on the growth and device fabrication of GaN-based blue/green/ultraviolet LEDs. Sheng Liu received his Ph.D. degree from Stanford University, USA in 1992. He is currently full professor at Wuhan University. His current research interests focus on the areas of LEDs, MEMS, optoelectronics,sensor and electronics packaging.
Chapter 1. Physics of III-nitride light-emitting diodes. Chapter 2. Epitaxial growth of III-nitride LEDs.-Chapter 3. High-efficiency top-emitting III-nitride LEDs.- Chapter 4. Flip-chip III-nitride LEDs.- Chapter 5. High-voltage and vertical LEDs.- Chapter 6. Device reliability and measurements.- Chapter 7. Mini/micro-LED.
Erscheinungsdatum | 12.06.2023 |
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Reihe/Serie | Advances in Optics and Optoelectronics |
Zusatzinfo | 225 Illustrations, color; 38 Illustrations, black and white; VIII, 239 p. 263 illus., 225 illus. in color. |
Verlagsort | Singapore |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Optik |
Technik ► Elektrotechnik / Energietechnik | |
Schlagworte | Current blocking layer • Current crowding • Current spreading layer • device reliability • Epitaxial Growth • external quantum efficiency • Flip-chip LEDs • High-voltage LEDs • III-Nitride Semiconductors • Internal Quantum Efficiency • Light Extraction Efficiency • Micro-LED • Mini-LED • nucleation layer • ohmic contact • Patterned sapphire substrate • Reflective electrode • Threading dislocations • Vertical LEDs |
ISBN-10 | 981-19-0438-3 / 9811904383 |
ISBN-13 | 978-981-19-0438-7 / 9789811904387 |
Zustand | Neuware |
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