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III-Nitride LEDs - Shengjun Zhou, Sheng Liu

III-Nitride LEDs

From UV to Green
Buch | Softcover
239 Seiten
2023 | 1st ed. 2022
Springer Verlag, Singapore
978-981-19-0438-7 (ISBN)
CHF 169,95 inkl. MwSt
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This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.

Dr. Shengjun Zhou​Shengjun Zhou received his Ph.D. degree from Shanghai Jiao Tong University, China in 2011. He is currently full Professor at Wuhan University, China. He was Research Fellow at the University of Michigan, Ann Arbor during 2014 and 2015. His research focuses on the growth and device fabrication of GaN-based blue/green/ultraviolet LEDs.  Sheng Liu received his Ph.D. degree from Stanford University, USA in 1992. He is currently full professor at Wuhan University. His current research interests focus on the areas of LEDs, MEMS, optoelectronics,sensor and electronics packaging. 

Chapter 1. Physics of III-nitride light-emitting diodes. Chapter 2. Epitaxial growth of III-nitride LEDs.-Chapter 3. High-efficiency top-emitting III-nitride LEDs.- Chapter 4. Flip-chip III-nitride LEDs.- Chapter 5. High-voltage and vertical LEDs.- Chapter 6. Device reliability and measurements.- Chapter 7. Mini/micro-LED.

Erscheinungsdatum
Reihe/Serie Advances in Optics and Optoelectronics
Zusatzinfo 225 Illustrations, color; 38 Illustrations, black and white; VIII, 239 p. 263 illus., 225 illus. in color.
Verlagsort Singapore
Sprache englisch
Maße 155 x 235 mm
Themenwelt Naturwissenschaften Physik / Astronomie Optik
Technik Elektrotechnik / Energietechnik
Schlagworte Current blocking layer • Current crowding • Current spreading layer • device reliability • Epitaxial Growth • external quantum efficiency • Flip-chip LEDs • High-voltage LEDs • III-Nitride Semiconductors • Internal Quantum Efficiency • Light Extraction Efficiency • Micro-LED • Mini-LED • nucleation layer • ohmic contact • Patterned sapphire substrate • Reflective electrode • Threading dislocations • Vertical LEDs
ISBN-10 981-19-0438-3 / 9811904383
ISBN-13 978-981-19-0438-7 / 9789811904387
Zustand Neuware
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