Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices
Seiten
2023
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-12-5535-9 (ISBN)
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-12-5535-9 (ISBN)
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.
| Erscheinungsdatum | 28.04.2023 |
|---|---|
| Verlagsort | Singapore |
| Sprache | englisch |
| Themenwelt | Technik ► Nachrichtentechnik |
| ISBN-10 | 981-12-5535-0 / 9811255350 |
| ISBN-13 | 978-981-12-5535-9 / 9789811255359 |
| Zustand | Neuware |
| Haben Sie eine Frage zum Produkt? |
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