The MOCVD Challenge
Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications
Seiten
1995
Institute of Physics Publishing (Verlag)
978-0-7503-0309-5 (ISBN)
Institute of Physics Publishing (Verlag)
978-0-7503-0309-5 (ISBN)
Zu diesem Artikel existiert eine Nachauflage
Focuses on MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. This book begins with III-V compounds and devices and growth techniques for multilayers and heterostructures. It then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials.
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering research, an authoritative overview of the development of the MOCVD technique, and the technique's impact on the development of new materials, devices, and their applications.
Coverage begins with an introduction to III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques, with the differential reflectivity treatment applied to lattice matched and mis-matched conditions. The author gives an in-depth treatment of the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with an up-to-date discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
The MOCVD Challenge is an invaluable introduction and guide for researchers in materials science, applied physics, and electrical engineering, who study the properties and applications of compound (III-V) semiconductor materials.
Professor Manijeh Razeghi is director of the Center for Quantum Devices at Northwestern University and leads an internationally renowned research team exploring the use of the MOCVD growth technique. Formerly head of research at Thomson-CSF in France, she was awarded the IBM Europe Science and Technology Prize for her early research into MOCVD.
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering research, an authoritative overview of the development of the MOCVD technique, and the technique's impact on the development of new materials, devices, and their applications.
Coverage begins with an introduction to III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques, with the differential reflectivity treatment applied to lattice matched and mis-matched conditions. The author gives an in-depth treatment of the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with an up-to-date discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
The MOCVD Challenge is an invaluable introduction and guide for researchers in materials science, applied physics, and electrical engineering, who study the properties and applications of compound (III-V) semiconductor materials.
Professor Manijeh Razeghi is director of the Center for Quantum Devices at Northwestern University and leads an internationally renowned research team exploring the use of the MOCVD growth technique. Formerly head of research at Thomson-CSF in France, she was awarded the IBM Europe Science and Technology Prize for her early research into MOCVD.
Preface. Foreword. Introduction. Introduction to semiconductor compounds. MOCVD growth technique. ^IIn-situ characterization during MOCVD. ^IEx-situ characterization techniques. MOCVD growth of GaAs layers. Growth and characterization of the GaInP-GaAs system. Optical devices. GaAs-based lasers. GaAs-based heterojunction electron devices grown by MOCVD. Optoelectronic integrated circuits (OEICs). Appendices. Effect of substrate miscut on the measured superlattice period. Optimization of thickness and In composition of InGaAs well for 980 nm lasers. Energy levels and laser gains in a quantum well (GaInAsP): the 'effective mass approximation'. Luttinger-Kohn Hamiltonian. Infrared detectors. Index.
| Erscheint lt. Verlag | 1.1.1995 |
|---|---|
| Verlagsort | London |
| Sprache | englisch |
| Maße | 156 x 234 mm |
| Gewicht | 907 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Maschinenbau | |
| ISBN-10 | 0-7503-0309-3 / 0750303093 |
| ISBN-13 | 978-0-7503-0309-5 / 9780750303095 |
| Zustand | Neuware |
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