MOS Interface Physics, Process and Characterization
Seiten
2021
CRC Press (Verlag)
978-1-032-10627-4 (ISBN)
CRC Press (Verlag)
978-1-032-10627-4 (ISBN)
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.
This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability.
This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.
This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability.
This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents. Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.
Introduction of MOSFET
1. Physics of interface
2. MOS processes
3. MOS characterizations
| Erscheinungsdatum | 06.10.2021 |
|---|---|
| Zusatzinfo | 1 Tables, black and white; 97 Line drawings, black and white; 26 Halftones, black and white; 123 Illustrations, black and white |
| Verlagsort | London |
| Sprache | englisch |
| Maße | 152 x 229 mm |
| Gewicht | 353 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Umwelttechnik / Biotechnologie | |
| ISBN-10 | 1-032-10627-1 / 1032106271 |
| ISBN-13 | 978-1-032-10627-4 / 9781032106274 |
| Zustand | Neuware |
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