Group III-Nitride Semiconductor Optoelectronics
John Wiley & Sons Inc (Verlag)
978-1-119-70863-6 (ISBN)
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In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. C. Jayant Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems.
The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits.
Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Chapters provide thorough connections between theory and experimental advances for optoelectronics and photonics.
Readers will also benefit from:
A thorough introduction to the band structure and optical properties of group III-nitride semiconductors
Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures
Practical discussions of the optical properties of low dimensional structures in group III-nitrides
In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits
Concise treatments of the quantum optical properties of nitride semiconductor devices
Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.
C. Jayant Praharaj, PhD, is a Research and Development Scientist at Band Photonics Materials in California. He received his PhD in Electrical and Computer Engineering from Cornell University in 2004. He has authored several research articles in peer-reviewed journals and conference proceedings.
Preface ix
1 Introduction 1
2 Band Structure and Optical Properties of Group III-Nitride Semiconductors 3
Crystal Symmetry (Wurtzite and Cubic Phases) 3
Lattice Periodicity and Crystal Hamiltonian 4
Bloch's Theorem and Nature of Electron States 4
Quantum Mechanical Properties Corresponding to Bloch States 5
Light–Matter Interaction in Semiconductors 7
Spontaneous and Piezoelectric Polarization 11
Phonon Spectrum 13
Scattering Mechanisms 13
Donors and Deep Acceptors 17
3 Growth and Doping of Group III-Nitride Devices 19
Major Epitaxial Growth Methods 19
In Situ and Implant Doping 31
Dislocations and Point Defects 31
Dopant-induced Defects 31
Substrates and Growth 31
Gallium Nitride Growth on Silicon Substrates 32
4 Optical Properties of Low-dimensional Structures in Group III Nitrides 39
Quantum Wells, Quantum Wires, and Quantum Dots 39
The k.p Method 43
Crystal Symmetry and Low-dimensional Structures 50
Alloy Disorder and Density Functional Theory Electronic Structure Calculation 51
Deviations from Charge Neutrality and Effect on Electronic Structure 54
Polarization Engineering Using Quaternaries and Complex Structures 55
Dislocations in Low-dimensional Structures and Carrier Dynamics 57
Disorder, Carrier Localization, and Effect on Recombination and Red Shifts 57
5 Light-emitting Diodes and Lasers 67
Blue, Green, and Ultraviolet (UV) LEDs 67
Light-emitting Diode Basic Operating Principles 71
Blue, Green, and UV Lasers 72
Blue, Green, and Device Laser Materials – Device Considerations 78
Nanowire microLEDs 80
LED Quantum Efficiencies and Laser Threshold Currents in Quantum Wires and Quantum Dots 80
Auger Recombination and Efficiency Droop in Group III-Nitride LEDs 82
Dislocations in Low-dimensional Structures and Carrier Dynamics 86
Disorder, Carrier Localization, and Effect on Recombination and Red Shifts 87
Staggered Quantum-well InGaN Laser Characteristics 87
Non-polar Plane Quantum-well InGaN LEDs and Lasers 89
Semi-polar Plane Quantum-well InGaN LEDs and Lasers 90
p-Type Ohmic Contacts and Efficiency of LEDs and Lasers 91
Vertical Cavity Surface Emitting Lasers 93
Distributed Feedback Lasers 94
Plasmonic Nanolasers 94
Indium Gallium Nitride LEDs and Lasers on Si Substrates 95
6 Inter Sub-band Devices 103
Quantum Cascade Lasers 103
Infrared Photodetectors 103
7 Photodetectors 111
Ultraviolet Photodetectors 111
Complex Dielectric Function 111
Basic Principle of Operation 113
Metal–Semiconductor–Metal (MSM) Photodetector 115
Solar-blind Group III-Nitride UV Photodetectors 118
p-i-n Photodiodes 118
Schottky Barrier Photodiodes 123
Heterogenous Photodiodes with Group III Nitrides and Transition Metal Dichalcogenides 123
Alloy Nitrides and Spectral Response 124
Photodetectors and Substrate Engineering 125
8 Photovoltaics and Energy Conversion Devices 129
Indium Gallium Nitride Material System for Solar Cells 129
Basic Solar Cell Physics – p-n Junction Solar Cells 129
Intermediate Band Solar Cells 137
Substrate Effects on InGaN Solar Cells 139
Ohmic Contact Effects in p-n and p-i-n InGaN Solar Cells 140
Plasmonically Enhanced Solar Cells 140
Solar Concentrating Photovoltaics 140
Tandem Solar Cells Using Indium Gallium Nitride 141
Semiconductor Photocatalysis Using InGaN 143
9 Quantum Photonic Properties of Nitride Semiconductor Devices 147
Non-classical Light from Group III-Nitride Heterostructures 147
Spontaneous and Piezoelectric Polarization Effects 150
Spectral Diffusion in Quantum Dots 151
Photon Linewidths 152
Optically Pumped Versus Electrically Pumped Quantum Emitters 152
Photon Detection Properties 152
10 Polaritons in Nitride Semiconductor Heterostructures 155
Strong Coupling between Excitons and Cavity Modes 155
Conditions for Strong Coupling 155
Energies of Polariton Modes 156
Characterization of Polariton Modes 156
Polaritonic Lasing versus Photonic Lasing 157
Exciton Binding Energies and Polaritonic Lasing 159
Spontaneous and Piezoelectric Polarization Effects 160
Optically Pumped versus Electrically Pumped Polariton Lasers 161
Inhomogeneous Broadening in Polaritonic Lasing 161
Polariton Lasing in Quantum Heterostructure Nanocavities 162
11 Plasmon-coupled Group III-Nitride Optoelectronic Devices 163
Coupling between Localized Surface Plasmons (LSPs) and Quantum Wells 163
LEDs and Lasers Based on LSPR Coupling 163
Biosensing Schemes Based on LSPR/QW Coupling 164
InGaN QW Substrates for Surface-enhanced Raman Scattering (SERS) Extended Hotspots 165
InGaN Nanorods Plus Metal NPs for Water Splitting Using SPR Effects 166
InGaN QDs Plus Metal NPs for Water Splitting Using SPR Effects 168
12 Photonic Integrated Circuits Using Group III-Nitride Semiconductors 169
Indium Gallium Nitride (InGaN)-based Monolithic Photonic Chips 169
Photonic Integrated Circuits with Plasmonic Components 170
Exploring Modulators Using Nitrides for Easier Integration 170
Combining Photonic and Electronic Components on the Same Chip 171
Monolithically Integrated Multi-color LED Display on a Single Chip 171
13 Conclusion 173
Index 175
| Erscheinungsdatum | 22.03.2023 |
|---|---|
| Verlagsort | New York |
| Sprache | englisch |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Maschinenbau | |
| ISBN-10 | 1-119-70863-X / 111970863X |
| ISBN-13 | 978-1-119-70863-6 / 9781119708636 |
| Zustand | Neuware |
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