Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Yue Hao, Jin Feng Zhang, Jin Cheng Zhang (Autoren)

Buch | Softcover

392 Seiten

2020
CRC Press (Verlag)
978-0-367-57436-9 (ISBN)

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Erscheinungsdatum	01.07.2020
Verlagsort	London
Sprache	englisch
Maße	178 x 254 mm
Gewicht	771 g
Themenwelt	Technik ► Elektrotechnik / Energietechnik
ISBN-10	0-367-57436-5 / 0367574365
ISBN-13	978-0-367-57436-9 / 9780367574369
Zustand	Neuware