Modeling And Electrothermal Simulation Of Sic Power Devices: Using SilvacoÂ© Atlas

Bejoy N Pushpakaran, Stephen B Bayne (Autoren)

Buch | Hardcover

464 Seiten

2019
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-323-782-7 (ISBN)

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The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)

Erscheinungsdatum	08.04.2019
Verlagsort	Singapore
Sprache	englisch
Themenwelt	Technik ► Elektrotechnik / Energietechnik
ISBN-10	981-323-782-1 / 9813237821
ISBN-13	978-981-323-782-7 / 9789813237827
Zustand	Neuware