Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

Jie Cheng (Autor)

Buch | Hardcover

137 Seiten

2017 | 1st ed. 2018
Springer Verlag, Singapore
978-981-10-6164-6 (ISBN)

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This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Introduction.- Material Removal Mechanism of Cu in KIO4-based Slurry.- Material Removal Mechanism of Ru in KIO4-based Slurry.- Tribocorrosion Investigations of Cu/Ru Interconnect Structure during CMP.- Micro-galvanic Corrosion of Cu/Ru Couple in KIO4 Solution.- Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru.- Synergetic Effect of Potassium Molybdate and Benzotriazole on the CMP of Ru and Cu in KIO4-based Slurry.- Conclusions and Recommendations.

Erscheinungsdatum	29.09.2017
Reihe/Serie	Springer Theses
Zusatzinfo	103 Illustrations, black and white; XVIII, 137 p. 103 illus.
Verlagsort	Singapore
Sprache	englisch
Maße	155 x 235 mm
Themenwelt	Technik ► Elektrotechnik / Energietechnik
Themenwelt	Technik ► Maschinenbau
Schlagworte	Chemical mechanical polishing • Chemical-mechanical synergistic effect • Cu/Ru galvanic corrosion • Novel barrier layer material • Tribocorrosion properties
ISBN-10	981-10-6164-5 / 9811061645
ISBN-13	978-981-10-6164-6 / 9789811061646
Zustand	Neuware