Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs
Seiten
2013
Cambridge University Press (Verlag)
978-1-107-03041-1 (ISBN)
Cambridge University Press (Verlag)
978-1-107-03041-1 (ISBN)
Understand the theory, design and applications of FD/SOI MOSFETs and 3-D FinFETs with this concise and clear guide to FD/UTB transistors. Topics covered include short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM, and nanoscale UTB CMOS performances.
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
Jerry G. Fossum is Distinguished Professor Emeritus of Electrical and Computer Engineering at the University of Florida, Gainesville, and a Fellow of the IEEE. He won the IEEE/EDS J. J. Ebers Award in 2004 for 'outstanding contributions to the advancement of SOI CMOS devices and circuits through modeling'. Vishal P. Trivedi is a Member of the Technical Staff and a Distinguished Innovator at Freescale Semiconductor, Inc., and a Senior Member of the IEEE.
Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index.
| Zusatzinfo | Worked examples or Exercises; 15 Tables, black and white; 2 Halftones, unspecified; 127 Line drawings, unspecified |
|---|---|
| Verlagsort | Cambridge |
| Sprache | englisch |
| Maße | 178 x 252 mm |
| Gewicht | 610 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| ISBN-10 | 1-107-03041-2 / 1107030412 |
| ISBN-13 | 978-1-107-03041-1 / 9781107030411 |
| Zustand | Neuware |
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