Advanced Theory of Semiconductor Devices
Wiley-IEEE Press (Verlag)
978-0-7803-3479-3 (ISBN)
Semiconductor devices are ubiquitous in today's world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design. Advanced Theory of Semiconductor Devices will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p-n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology.
This in-depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices.
About the Author Karl Hess holds the Swanlund Endowed Chair and is professor of electrical and computer engineering and of physics at the University of Illinois, Urbana-Champaign. Dr. Hess has dedicated a major portion of his research to electronic transport in semiconductors and semiconductor devices, with particular emphasis on hot electron effects and effects pertinent to device miniaturization. He is particularly interested in problems that require large computational resources for their solution. Dr. Hess' current research at the Beckman Institute of the University of Illinois is in the area of molecular and electronic nanostructures. He has received numerous awards, including the 1993 IEEE J. J. Ebers Award of the Electron Devices Society and the 1995 IEEE David Sarnoff Field Award for Electronics. He is also a Fellow of the American Academy of Arts and Sciences.
Preface.
Acknowledgments.
A Brief Review of the Basic Equations.
The Symmetry of the Crystal Lattice.
The Theory of Energy Bands in Crystals.
Imperfections of Ideal Crystal Structure.
Equilibrium Statistics for Electrons and Holes.
Self-Consistent Potentials and Dielectric Properties.
Scattering Theory.
The Boltzmann Transport Equation.
Generation-Recombination.
The Heterojunction Barrier.
The Device Equations of Shockley and Stratton.
Numerical Device Simulations.
Diodes.
Laser Diodes.
Transistors.
Future Semiconductor Devices.
Appendix A: Tunneling and the Golden Rule.
Appendix B: The One Band Approximation.
Appendix C: Temperature Dependence of the Band Structure.
Appendix D: Hall Effect and Magnetoresistance.
Appendix E: The Power Balance Equation.
Appendix F: The Self-Consistent Potential at a Heterojunction.
Appendix G: Schottky Barrier Transport.
Index.
About the Author.
| Erscheint lt. Verlag | 13.12.1999 |
|---|---|
| Sprache | englisch |
| Maße | 158 x 237 mm |
| Gewicht | 596 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 0-7803-3479-5 / 0780334795 |
| ISBN-13 | 978-0-7803-3479-3 / 9780780334793 |
| Zustand | Neuware |
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