Amorphous and Crystalline Silicon Carbide III

and Other Group IV — IV Materials. Proceedings of the 3rd International Conference, Howard University, Washington, D. C., April 11 – 13, 1990

Gary L. Harris, Michael G. Spencer, Cary Y.-W. Yang (Herausgeber)

Buch | Softcover

XII, 372 Seiten

2012
Springer Berlin (Verlag)
978-3-642-84404-1 (ISBN)

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This volume contains written versions of the papers presented at the Third Inter national Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (lCACSC 90), which was held at Howard University, April 11-13, 1990 in Washington, DC. The ICACSC continued to provide an international forum for discussion and exchange of ideas regarding the current state of research aimed at developing silicon carbide devices and circuits and related materials. ICACSC attracted over one hundred participants from seven countries. A special session was held in honor of the eight Soviet scientists who attended the conference. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. The conference also included a poster session for the first time. This volume contains 54 refereed contributions grouped into four parts. Several exciting new results are reported for the first time here: SiC-based solid-solution growth and technology, the formation of SiGe heterostructures by ion implantation, 6H-SiC substrates grown by the sublimation method, expla nation of the appearance of negative differential resistance in a N+PN-SiC-6H transistor by the Wannier-Starck effect, the formation of amorphous SiC/Si het erojunctions by the polymer route, and the prospects of developing SiC bipolar transistors and thyristors.

Of particular interest to materials scientists and semiconductor physicists, this volume reports new techniques in the growing field of silicon carbide and other IV-IV materials.

I Growth of Single Crystal SiC.- SiC-Based Solid Solutions: Technology and Properties.- Growth and Morphology of 6H-SiC Prepared by the Sublimation Method.- Growth of 6H-SiC Single Crystals by the Modified Sublimation Method.- A System for Growth of Bulk Beta-SiC by Sublimation.- Sublimation Vapor Transport Growth of Silicon Carbide.- Defects and Polytypism of SiC Bulk Single Crystals.- II Growth and Characterization of Amorphous SiC.- Growth Mechanism of Hydrogenated Amorphous SiC from a Glow-Discharge Plasma.- Amorphous Silicon-Carbon Alloy Prepared by the Controlled Plasma Magnetron Method.- Study of Substrate Doping and Amorphous SiC:H/Crystalline Si Interface with a MIS Structure.- Effects of Operating Temperatures on Optical and Electrical Properties of Amorphous SiC Deposited by Photo-CVD.- Polycrystalline Silicon-Silicon Carbide Thin Films Produced by Plasma Enhanced CVD.- Modeling of Wide Bandgap Microcrystalline Silicon Carbide/Crystalline Silicon Heterojunctions.- Hydrogen Depth Profile Measurement in a-Si1-x Cx:H Films by Elastic Recoil Detection.- Infrared, Raman and ESR Studies of a-SiC Prepared by the Polymer Route.- Amorphous SiC/Si Heterojunctions Prepared by the Polymer Route.- III Materials and Device Properties.- Crystal Growth of ?-SiC on Si and Its Application to MOSFETs.- Sensor Properties of n-Type ?-SiC.- Charge Trapping in Cubic Silicon Carbide MIS Capacitors.- Development Prospects for SiC Bipolar Transistors and Thyristors.- Investigation of the Blue Electroluminescence Efficiency of Epitaxial SiC-6H Structures.- Spectroscopic Studies of Donors in 3C-SiC Films.- Electron Irradiation Effects on CVD-Grown 3C-SiC Epilayers.- Residual Carriers and ESR Centers in Epitaxially Grown 3C-SiC.- Transport Measurements and Shallow Donors in Cubic SiC.-Photoluminescence Properties of 6H-SiC Grown by Step-Controlled Epitaxy.- Comparison of Experimental Laue Transmission and Reflection Patterns for 4H, 6H, 15R, and 3C SiC.- Ohmic Contacts to Silicon Carbide Devices.- Surface Micromachining of n-Type ?-SiC Using Laser Assisted Photoelectrochemical Etching.- Microplasmas and Current Fluctuations in Silicon Carbide p-n Structures.- Positron Diagnostics of Radiation Defects in Silicon Carbide.- The Temperature Dependence of Impact Ionization in Silicon Carbide, and Related Effects.- The Wannier-Stark Effect and N-Shaped Volt-Ampere Characteristics in a Superlattice of 6H-SiC.- Physical and Practical Aspects of Electron Heating in Superlattice ?-SiC.- Investigation of Structural Defects in SiC Crystals by Transmission Electron Microscopy.- Study of Al/Thermal Oxide/?-SiC MOS Diodes.- Dissipative Structures in Hot Electron-Hole Plasma of Hexagonal Silicon Carbide (?-SiC).- Characterization of the Electronic and Atomic Structure of Surfaces and Interfaces of SiC/Si Grown at Low Temperature.- Two-Dimensional Modeling of New Silicon Carbide Devices.- Optical Properties of 3C-SiC Under High Hydrostatic Pressure.- Minority Carrier Diffusion Length in Epitaxially Grown SiC(6H) pn Diodes.- Contact Resistance of High-Temperature SiC Metallization.- Breakdown in Silicon Carbide pn Junctions.- SiC p-n Junction Photosensitivity in the Long-Wavelength Region.- IV Techniques for Thin Film Growth.- Low Pressure Growth of Silicon Carbide on Silicon in a Vertical Reactor.- Selective Growth of Cubic SiC on Si by Chemical Vapor Deposition.- Shortwave SiC-LEDs Prepared by the Sublimation "Sandwich Method".- Liquid-Phase Epitaxy of Silicon Carbide at Temperatures of 1100°-1200°C.- Growth and Characterizaton of 3C-SiC and 6H-SiCFilms on 6H-SiC Wafers.- The Effects of Impurities on Mass Transport and the Growth Mechanism of SiC Epitaxial Layers Grown by Sublimation.- Doping Peculiarities of SiC Epitaxial Layers Grown by the Sublimation "Sandwich Method".- Formation of a Silicon Heterostructure by Germanium Ion Implantation.- Low Temperature Selective Deposition of Diamond Thin Films.- Two-Dimensional Computational Modeling of Silicon Carbide Deposition in a Vertical CVD Reactor.- Epitaxial Growth of 6H-SiC by Chemical Vapor Deposition.- Index of Contributors 371.

Erscheint lt. Verlag	9.2.2012
Reihe/Serie	Springer Proceedings in Physics
Zusatzinfo	XII, 372 p. 39 illus.
Verlagsort	Berlin
Sprache	englisch
Maße	155 x 235 mm
Gewicht	586 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
Schlagworte	Chemical vapor deposition • IV-IV materials • SIGE • Silicon carbide • silicon carbide devices
ISBN-10	3-642-84404-9 / 3642844049
ISBN-13	978-3-642-84404-1 / 9783642844041
Zustand	Neuware