Semiconductor Interfaces: Formation and Properties
Springer Berlin (Verlag)
978-3-642-72969-0 (ISBN)
Dr. Nino Boccara is Professor Emeritus of Physics at the University of Illinois at Chicago, Professor Emeritus of Mathematics at the Ecole Supérieure de Physique et Chimie de la Ville de Paris, and Former Director of Research in Theoretical Physics at the CNRS.
I Introduction.- An Introduction to the Formation and Properties of Semiconductor Interfaces.- II Experimental Study of the Formation of Semiconductor Interfaces.- Formation of Semiconductor Interfaces During Molecular Beam Epitaxy.- Build-up and Characterization of "Artificial" Surfaces for III-V Compound Semiconductors.- III Structural Characterization of the Interfaces.- Atomic Structure of Semiconductor Surfaces.- Monolayer Sensitive X-Ray Diffraction Techniques: A Short Guided Tour Through the Literature.- SEXAFS for Semiconductor Interface Studies.- XANES and XARS for Semiconductor Interface Studies.- Recent Progress in Electron Spectroscopy: Application to the Local Geometry Determination at Surfaces and Interfaces.- On the Use of Electron Microscopy in the Study of Semiconductor Interfaces.- Analytical Scanning Electron Microscopy Under Ultra High Vacuum.- Scanning Tunneling Microscopy and Spectroscopy.- Field Emission Microscopy for Analysis of Semiconductor Surfaces.- Surface and Interface Studies with MeV Ion Beams.- Surface Characterization by Low-Energy Ion Scattering.- IV Electronic Properties of Interfaces.- Band Structure Theory of Semiconductor Surfaces and Interfaces.- Electronic Properties of Semiconductors: Fermi Level Pinning in Schottky Barriers and Band Line-up in Semiconductors.- Photoemission and Inverse Photoemission from Semiconductor Interfaces.- Photoelectron Spectroscopies: Probes of Chemical Bonding and Electronic Properties at Semiconductor Interfaces.- Two-Photon Photoemission in Semiconductors.- Formation and Electrical Properties of Metal-Semiconductor Contacts.- Deep Level Transient Spectroscopy for Semiconductor Surface and Interface Analysis.- Admittance Spectroscopy of Interface States in Metal/Semiconductor Contacts.- VOptical and Vibrational Properties of Interfaces.- Optical Properties of Surfaces and Interfaces.- Vibrational Properties at Semiconductor Surfaces and Interfaces.- Raman Scattering from Interface Regions: Structure, Composition and Electronic Properties.- VI Interfaces: Present Status and Perspectives.- Role of Interfaces in Semiconductor Heterostructures.- The Physics of Metal Base Transistors.- Perspectives on Formation and Properties of Semiconductor Interfaces.- Index of Contributors.
Erscheint lt. Verlag | 6.12.2011 |
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Reihe/Serie | Springer Proceedings in Physics |
Zusatzinfo | XI, 389 p. |
Verlagsort | Berlin |
Sprache | englisch |
Maße | 170 x 244 mm |
Gewicht | 700 g |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
Technik ► Maschinenbau | |
Schlagworte | Development • diffraction • electronic properties • Microscopy • optical properties • optoelectronic devices • Production • semiconductor • spectroscopy • Transistor |
ISBN-10 | 3-642-72969-X / 364272969X |
ISBN-13 | 978-3-642-72969-0 / 9783642729690 |
Zustand | Neuware |
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