Zinc Oxide - A Material for Micro- and Optoelectronic Applications (eBook)

Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004

Norbert H. Nickel, Evgenii Terukov (Herausgeber)

eBook Download: PDF

2005 | 2005
XVI, 240 Seiten
Springer Netherland (Verlag)
978-1-4020-3475-6 (ISBN)

Infos

Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.

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Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "e;Zinc oxide as a material for micro- and optoelectronic applications"e;, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.

Inhalt

Contributing Authors. Preface. Part I: ZnO bulk and layer growth: The Scope of Zinc Oxide Bulk Growth; R. Triboulet et al. Growth Mechanism of ZnO Layers; A.Kh. Abduev et al. Kinetics of High-Temperature Defect Formation in ZnO in the Stream of Oxygen Radicals; M.B. Kotlyarevsky et al. Part II: Electrical, Optical, and Structural Properties: Electrical Properties of ZnO; David C. Look et al. Electrical Properties of ZnO Thin Films and Single Crystals; M. Grundmann et al. Structure, Morphology, and Photoluminescence of ZnO Films; V.A. Karpina. Optics and Spectroscopy of Point Defects in ZnO; Vladimir Nikitenko. Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals; T. Nobis et al. Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy; E. Muller et al. Part III: Role of Hydrogen: Muon Spin Rotation Measurements on Zinc Oxide; E.A. Davis. Hydrogen Donors in Zinc Oxide; M.D. McCluskey and S.J. Jokela.
Hydrogen-Related Defects in Zno Studied by JR Absorption Spectroscopy; E.V. Lavrov et al. Influence of the Hydrogen Concentration on H Bonding in Zinc Oxide; N.H. Nickel. Part IV: Fundamental properties: Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO; A.V. Rodina et al. Fundamental Optical Spectra and Electronic Structure of Zno Crystals; V. Val et al. Photo-Induced Localized Lattice Vibrations in ZnO Doped with 3d Transition Metal Impurities; Alexey Kislov. Part V: Device applications: ZnO Window Layers for Solar Cells; W. Fuhs. ZnO/AlGaN Ultraviolet Light Emitting Diodes; E.V. Kaunina et al. ZnO Transparent Thin-Film Transistor Device Physics; J.F. Wager. Zinc Oxide Thin Film Transistors; E. Fortunato et al. Index

Produkt-Details

• Erscheint lt. Verlag: 28.12.2005
• Reihe/Serie: Nato Science Series II:
• Reihe/Serie: NATO Science Series II: Mathematics, Physics and Chemistry
• Reihe/Serie: NATO Science Series II: Mathematics, Physics and Chemistry
• Zusatzinfo: XVI, 240 p.
• Verlagsort: Dordrecht
• Sprache: englisch
• Themenwelt: Naturwissenschaften ► Physik / Astronomie ► Optik
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Themenwelt: Technik ► Maschinenbau
• Schlagworte: Absorption • Exciton • Microscopy • optical properties • Optics • spectroscopy • Thin Films • Transmission
• ISBN-10: 1-4020-3475-X / 140203475X
• ISBN-13: 978-1-4020-3475-6 / 9781402034756