Ge-based channel MOSFETs
Process Integration and Performance Evaluation for Sub-22nm Node Digital CMOS Logic Technology
Seiten
2011
LAP Lambert Acad. Publ. (Verlag)
978-3-8465-0686-8 (ISBN)
LAP Lambert Acad. Publ. (Verlag)
978-3-8465-0686-8 (ISBN)
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This work presents research on high mobility channel MOSFET structures (planar and non-planar) using group IV material (mainly SiGe) for enhanced performance and reduced operating power. This work especially focuses on improving the performance of short channel device performance of SiGe channel pMOSFETs which has long been researched yet clearly demonstrated in literature only recently. To reach the goal, novel processing technologies such as millisecond flash source/drain anneal and high pressure hydrogen post-metal anneal are explored. Finally, performance dependence on channel and substrate direction has been analyzed to find the optimal use of these SiGe channels. This work describes an exciting opportunity of weighting the possibility of using high mobility channel MOSFETs for future logic technology.
| Sprache | englisch |
|---|---|
| Maße | 150 x 220 mm |
| Gewicht | 255 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| ISBN-10 | 3-8465-0686-9 / 3846506869 |
| ISBN-13 | 978-3-8465-0686-8 / 9783846506868 |
| Zustand | Neuware |
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