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Rare-Earth Doped Semiconductors II: Volume 422 -

Rare-Earth Doped Semiconductors II: Volume 422

Buch | Hardcover
366 Seiten
1996
Materials Research Society (Verlag)
978-1-55899-325-9 (ISBN)
CHF 39,95 inkl. MwSt
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Erscheint lt. Verlag 25.10.1996
Reihe/Serie MRS Proceedings
Zusatzinfo Worked examples or Exercises
Sprache englisch
Gewicht 682 g
Themenwelt Naturwissenschaften Physik / Astronomie Elektrodynamik
Technik Maschinenbau
ISBN-10 1-55899-325-8 / 1558993258
ISBN-13 978-1-55899-325-9 / 9781558993259
Zustand Neuware
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