Study of AlN/GaN HEMTs

MBE Growths, Transport Properties and Device Issues

Yu Cao (Autor)

Buch | Softcover

196 Seiten

2011
VDM Verlag Dr. Müller
978-3-639-33630-6 (ISBN)

Infos

The large polarization difference between AlN and GaN provides extremely high electron densities at the heterointerface covered by only 3-4 nm AlN barrier, which makes AlN/GaN heterojunction the ultimate nitride structure for high-frequency applications. This work includes the systematic study of the MBE growth of AlN/GaN HEMTs, theoretical study of 2DEG scattering mechanisms, and device issues of in-situ buffer leakage removal with polarization engineering and decreasing contact resistance with band diagram engineering. This book shows the approach to achieve the record high 2DEG density (5e13/cm2) and the record-low sheet resistance (128 ohm/sq) in high-quality AlN/GaN HEMTs. As a theoretical study, electron scattering mechanisms are reviewed in this book. A novel scattering mechanism, remote surface roughness scattering, is proposed. Large buffer leakage and ohmic contact resistance are two factors that heavily degrade high-speed device performance. Polarization engineering was applied in the buffer leakage study, which increased the ON/OFF ratio by 4 orders. Regrown Si-doped GaN and graded InGaN/InN contacts have been demonstrated with a comprehensive X-ray diffraction study.

Autor

Dr. Yu Cao was a research fellow in IMRE (Singapore). Now he is with Kopin Corp (USA) as a staff scientist. His research interests include compound semiconductor epitaxy (both MBE and MOCVD), device physics, and novel electronic device development. He has authored/co-authored 1 book, 3 patents, and more than 30 peer-reviewed journal papers.

Produkt-Details

• Sprache: englisch
• Maße: 150 x 220 mm
• Gewicht: 277 g
• Themenwelt: Technik ► Elektrotechnik / Energietechnik
• Schlagworte: Feldeffekttransistoren • FET
• ISBN-10: 3-639-33630-5 / 3639336305
• ISBN-13: 978-3-639-33630-6 / 9783639336306
• Zustand: Neuware