Modeling and Characterization of RF and Microwave Power FETs
Seiten
2011
Cambridge University Press (Verlag)
978-0-521-33617-8 (ISBN)
Cambridge University Press (Verlag)
978-0-521-33617-8 (ISBN)
This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
1. RF and microwave power transistors; 2. An introduction to the compact modeling of high power FETs; 3. Electrical measurement techniques; 4. Passive components: simulation and modeling; 5. Thermal characterization and modeling; 6. Modeling the active transistor; 7. Function approximation for compact modeling; 8. Model implementation in CAD tools; 9. Model validation; About the authors; Index.
| Erscheint lt. Verlag | 30.6.2011 |
|---|---|
| Reihe/Serie | The Cambridge RF and Microwave Engineering Series |
| Verlagsort | Cambridge |
| Sprache | englisch |
| Maße | 170 x 244 mm |
| Gewicht | 610 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| ISBN-10 | 0-521-33617-1 / 0521336171 |
| ISBN-13 | 978-0-521-33617-8 / 9780521336178 |
| Zustand | Neuware |
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