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Handbook of Zinc Oxide and Related Materials -

Handbook of Zinc Oxide and Related Materials

Two Volume Set

Zhe Chuan Feng (Herausgeber)

Media-Kombination
1052 Seiten
2012
Crc Press Inc
978-1-4398-5580-5 (ISBN)
CHF 479,95 inkl. MwSt
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Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO.

The two volumes of this handbook deliver an invaluable, cohesive source of information for material growers and evaluators, device design and processing engineers, and users and researchers of ZnO-based technologies. Each chapter is written by experts in the field who discuss the significant advances made in recent years, assess the progress made by different research groups, and offer suggestions for further work. The first volume presents fundamental knowledge on ZnO-based materials and technologies while the second focuses on devices and nanostructures created from ZnO and similar materials.

Covering key properties and important technologies of ZnO-based devices and nanoengineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.

Zhe Chuan Feng is a professor in the Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering at National Taiwan University. Dr. Feng has previously worked at Emory University, National University of Singapore, EMCORE Corporation, Institute of Materials Research and Engineering in Singapore, Axcel Photonics, and Georgia Tech. He has edited/coedited nine books and published roughly 500 scientific papers. His work focuses on materials research and MOCVD growth of LED, III-Nitrides, SiC, ZnO, and other semiconductors/oxides.

Volume IPart I ZnO Basic: Brief Historical Review of Research/Development and Basic/Interdisciplinary Characterization on ZnO. Pressurized Melt Growth of ZnO Single Crystals. New Design and Development of MOCVD: Process and Modeling for ZnO-Based Materials. p-Type ZnO: Current Status and Perspective. Part II ZnO Epitaxy: ZnO Nanostructures and Thin Films Grown in Aqueous Solution: Growth, Defects and Doping. Second Harmonic Generation and Related Studies on ZnO Films. Optical Properties and Carrier Dynamics of ZnO and ZnO/ZnMgO Multiple Quantum Well Structures. p-Type ZnO-N Films: Preparation and Characterization by Synchrotron Radiation. Optical Properties of MgZnO/ZnO Heterostructures Grown on Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy. Part III ZnO Alloys: The (Mg,Zn)O Alloys. Growth and Characterizations of Zn(Mg,Cd)O Alloys and Heterostructures Using Remote-Plasma-Enhanced MOCVD. Structural and Optical Properties of Zn1-x CuxO Thin Films. Structural and Magnetic Properties of ZnO Alloy Films with Cu, Cr and Fe by RF Magnetron Sputtering Technique. Index.

Volume IIPart I ZnO-Based Nanostructures: Metalorganic Chemical Vapor Deposition and Characterization of ZnO-Based Nanostructures and Thin Films. Solution Grown n-Type ZnO Nanostructures: Synthesis, Microstructure and Doping. Heteroepitaxy of ZnO on SiC as a Route toward Nanoscale p-n Junction. ZnO-Based Nanostructures. Part II ZnO-Based Optoelectronic Devices: Light-Emitting Diodes Based on p-GaN/i-ZnO/n-ZnO Heterojunctions. Light-Emitting Diodes Based on n-ZnO/n-Si(GaAs) Isotype Heterojunction. ZnO Thin Films, Quantum Dots, and Light-Emitting Diodes Grown by Atomic Layer Deposition. Hybrid Light-Emitting Diodes Based on ZnO Nanowires. ZnBeMgO Alloys and UV Optoelectronic Applications. Ultraviolet ZnO Random Laser Diodes. Part III ZnO-Based Electronic Devices and Applications: Metal-Semiconductor Field-Effect Transistors and Integrated Circuits Based on ZnO and Related Oxides. The Growth of ZnO for Neutron Detection. Amorphous In–Ga–Zn–O Thin-Film Transistors: Fabrication and Properties. Index.

Erscheint lt. Verlag 12.11.2012
Reihe/Serie Electronic Materials and Devices Series
Zusatzinfo 61 Tables, black and white; 679 Illustrations, black and white
Verlagsort Bosa Roca
Sprache englisch
Maße 178 x 254 mm
Gewicht 2131 g
Themenwelt Naturwissenschaften Chemie
Technik Maschinenbau
ISBN-10 1-4398-5580-3 / 1439855803
ISBN-13 978-1-4398-5580-5 / 9781439855805
Zustand Neuware
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