New Developments in Semiconductor Physics
Springer Berlin (Verlag)
978-3-540-09988-8 (ISBN)
Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectroscopy.- Luminescence of chromium in gallium arsenide.- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K.- Properties of an extended defect in GaAs.62P.38.- Large defect-lattice relaxation phenomena in solids.- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In).- Electron-phonon interaction: Polaron transport.- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb.- Photoluminescence in amorphous semiconductors.- Man-made semiconductor superlattices.- The localized states of interfaces and their physical models.- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids.- Is there a minimum linewidth in integrated circuits?.
Erscheint lt. Verlag | 1.5.1980 |
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Reihe/Serie | Lecture Notes in Physics |
Zusatzinfo | V, 283 p. 5 illus. |
Verlagsort | Berlin |
Sprache | englisch |
Maße | 170 x 244 mm |
Gewicht | 507 g |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
Technik ► Elektrotechnik / Energietechnik | |
Schlagworte | Circuit • Hall Effect • Integrated circuit • Physics • semiconductor |
ISBN-10 | 3-540-09988-3 / 3540099883 |
ISBN-13 | 978-3-540-09988-8 / 9783540099888 |
Zustand | Neuware |
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