Materials Fundamentals of Gate Dielectrics

Alexander A. Demkov, Alexandra Navrotsky (Herausgeber)

Buch | Softcover

476 Seiten

2011 | Softcover reprint of hardcover 1st ed. 2005
Springer (Verlag)
978-90-481-6786-9 (ISBN)

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According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between the 1- and 90-nanometer nodes. One of the prime reasons is the low dielectric constant of SiO - thechoice dielectricof all modern electronics. This book presents materials 2 fundamentals of the novel gate dielectrics that are being introduced into semic- ductor manufacturing to ensure the Moore's law scaling of CMOS devices. This is a very rapidly evolving?eld of research and we try to focus on the basicundersta- ing of structure, thermodynamics, and electronic properties of these materials that determine their performance in the device applications. Thevolume was conceivedin 2001 afteraSymposium on Alternative Gate - electrics we had at the American Physical Society March Meeting in Seattle, upon the suggestion of the Kluwer editor Sabine Freisem. After several discussions we decided that such a bookindeed would be useful as long as we could focus on the fundamental side of the problem and keep the level of the discussion accessible to graduate students andavariety of professionals from different ?elds. The problem of?nding a replacement for SiO asa gate dielectric bringstogether inaunique way 2 many fundamental disciplines.
At the same time this problem is truly applied and practical. It looked unlikelythat the perfect new material would be foundfast; rather there would be a series of evolving candidate materialsand approaches.

Alexander Demkov received his Ph.D. in Physics at Arizona State University in 1995 secializing in electronic structure theory. His postdoctoral research was focused on electronic properties of zeolites. Het joined Motorola R&D in 1997, and has been working on materials problems of advanced CMOS gate stack, and quantum transport. He has authored over 60 papers, and has two issued patents. He has organized several national and international meetings, serves as an associate editor ofg the Journal of Vacuum Science and Technology, and is a member of the ITRS working group on Emerging Research Materials. He is adjunct professor of Physics at Arizona State University. Alexandra Navrotsky was educated at the Bronx High School of Science and the University of Chicago (B.S., M.S., and Ph.D. in physical chemistry). After postdoctoral work in Germany and at Penn State University, she joined the faculty in Chemistry at Arizona State University, where she remained till her move to the Department of Geological and Geophysical Sciences at Princeton University in 1985. She chaired that department from 1988 to 1991 and has been active in the Princeton Materials Institute. On July 1, 1997, she became an interdisciplinary professor of Ceramic, Earth and Environmental Materials Chemistry at the University of California at Davis and is now Edward Roessler Chair in Mathematical and Physical Sciences. She directs the NEAT (Nanomaterials in the Environment, Agriculture and Technology) activities at Davis, including a faculty hiring initiative, an NSF-IGERT, and a new Organized Research Unit.

Materials and Physical Properties of High-K Oxide Films.- Device Principles of High-K Dielectrics.- Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics.- Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces.- Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides.- Dielectric Properties of Simple and Complex Oxides from First Principles.- IVb Transition Metal Oxides and Silicates: An Ab Initio Study.- The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors.- Interfacial Properties of Epitaxial Oxide/Semiconductor Systems.- Functional Structures.- Mechanistic Studies of Dielectric Growth on Silicon.- Methodology for Development of High-? Stacked Gate Dielectrics on III–V Semiconductors.

Zusatzinfo	VIII, 476 p.
Verlagsort	Dordrecht
Sprache	englisch
Maße	160 x 240 mm
Themenwelt	Naturwissenschaften ► Chemie ► Physikalische Chemie
	Naturwissenschaften ► Physik / Astronomie ► Allgemeines / Lexika
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
ISBN-10	90-481-6786-8 / 9048167868
ISBN-13	978-90-481-6786-9 / 9789048167869
Zustand	Neuware