Defects and Diffusion in Semiconductors X
Trans Tech Publications Ltd (Verlag)
978-3-908451-54-9 (ISBN)
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Defect and Diffusion Forum Vol. 272
New Method to Determine Young’s Modulus of Micro Crystal Based on Raman Spectrometer
Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons
Solid-State Reaction in Al-Fe Binary System Induced by Mechanical Alloying
Thermal Behaviour of Xenon in a Refractory Metal for Gas Fast Reactor Fuel Elements
Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating
Molecular Dynamics Simulation of Brittle Fracture in Bcc Iron
Diffusion in the AlMo3 Ordered Intermetallic
First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron
Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces
Growth Kinetics of Boride Layers: A Modified Approach
Structure and Optical Properties of Magnetron Sputtered SiOx Layers with Silicon Nanoparticles
Reaction of Iron with Amorphous Silicon and Crystal Silicon for the Fabrication of Iron Silicides
Theoretical Determination of Pressure-Volume-Temperature Relationship of Some Alkali Halides
Investigations of the Defect Structures and EPR Parameters for the Tetragonal and Cubic Ni2+ Centers in AgX (X=Cl, Br)
Concentration Micro-Field for Lamellar Eutectic Growth
| Erscheint lt. Verlag | 4.12.2007 |
|---|---|
| Reihe/Serie | Defect and Diffusion Forum ; Volume 272 |
| Verlagsort | Zurich |
| Sprache | englisch |
| Maße | 170 x 240 mm |
| Gewicht | 800 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Maschinenbau | |
| ISBN-10 | 3-908451-54-X / 390845154X |
| ISBN-13 | 978-3-908451-54-9 / 9783908451549 |
| Zustand | Neuware |
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