Strain-Induced Effects in Advanced MOSFETs
Seiten
2010
|
2011
Springer Wien (Verlag)
978-3-7091-0381-4 (ISBN)
Springer Wien (Verlag)
978-3-7091-0381-4 (ISBN)
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
1 Introduction2 Scaling, Power Consumption, and Mobility Enhancement Techniques3 Strain and Stress4 Basic Properties of the Silicon Lattice5 Band Structure of Relaxed Silicon6 Perturbative Methods for Band Structure Calculations in Silicon7 Strain Effects on the Silicon Crystal Structure8 Strain Effects on the Silicon Band Structure9 Strain Effects on the Conduction Band of Silicon10 Electron Subbands in Silicon in the Effective Mass Approximation11 Electron Subbands in Thin Silicon Films12 Demands of Transport Modeling in Advanced MOSFETs
| Erscheint lt. Verlag | 24.11.2010 |
|---|---|
| Reihe/Serie | Computational Microelectronics |
| Zusatzinfo | XIV, 252 p. |
| Verlagsort | Vienna |
| Sprache | englisch |
| Gewicht | 625 g |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Schlagworte | MOSFET • MOSFET (MOS-Feldeffekt-Transistor) • Semiconductor Devices • strain technique • transport modeling |
| ISBN-10 | 3-7091-0381-9 / 3709103819 |
| ISBN-13 | 978-3-7091-0381-4 / 9783709103814 |
| Zustand | Neuware |
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