Technology of Gallium Nitride Crystal Growth
Springer Berlin (Verlag)
978-3-642-04828-9 (ISBN)
This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Institute of Multidisciplinary Research of Advanced Materials. His field of competence covers the crystal growth of films and bulk material from the liquid and vapor phase and material aspects of the wide band gap semiconductors of group-III nitrides and ZnO. He has authored 130 publications in books, journals and conferences and holds 6 patents.
Market for Bulk GaN Crystals.- Development of the Bulk GaN Substrate Market.- Vapor Phase Growth Technology.- Hydride Vapor Phase Epitaxy of GaN.- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds.- Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology.- Nonpolar and Semipolar GaN Growth by HVPE.- High Growth Rate MOVPE.- Solution Growth Technology.- Ammonothermal Growth of GaN Under Ammono-Basic Conditions.- A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method.- Acidic Ammonothermal Growth Technology for GaN.- Flux Growth Technology.- High Pressure Solution Growth of Gallium Nitride.- A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal.- Low Pressure Solution Growth of Gallium Nitride.- Characterization of GaN Crystals.- Optical Properties of GaN Substrates.- Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.
| Erscheint lt. Verlag | 24.6.2010 |
|---|---|
| Reihe/Serie | Springer Series in Materials Science |
| Zusatzinfo | XXII, 326 p. 200 illus. |
| Verlagsort | Berlin |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 760 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Naturwissenschaften ► Physik / Astronomie ► Thermodynamik | |
| Technik ► Elektrotechnik / Energietechnik | |
| Schlagworte | Ammonothermal growth • Crystal • Crystal growth from solution • Gallium nitride (GaN) • Hydride vapor phase epitaxy (HVPE) • Properties of GaN • spectroscopy |
| ISBN-10 | 3-642-04828-5 / 3642048285 |
| ISBN-13 | 978-3-642-04828-9 / 9783642048289 |
| Zustand | Neuware |
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