Metal Impurities in Silicon-Device Fabrication
Seiten
1995
Springer Berlin (Hersteller)
978-3-540-58317-2 (ISBN)
Springer Berlin (Hersteller)
978-3-540-58317-2 (ISBN)
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An examination of the transition-metal impurities generated during silicon sample and device fabrication, which surveys the different mechanisms responsible for contamination and their impact on device performance. Various detection methods are explored.
This monograph describes the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency.
| Reihe/Serie | Springer Series in Materials Science ; 24 |
|---|---|
| Zusatzinfo | 47 figs. |
| Sprache | englisch |
| Gewicht | 466 g |
| Einbandart | gebunden |
| Schlagworte | Springer Series in Materials Science; Vol 24 |
| ISBN-10 | 3-540-58317-3 / 3540583173 |
| ISBN-13 | 978-3-540-58317-2 / 9783540583172 |
| Zustand | Neuware |
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