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Semiconductor Interfaces, Microstructures and Devices - Zhe Chuan Feng

Semiconductor Interfaces, Microstructures and Devices

Properties and applications

(Autor)

Buch | Hardcover
308 Seiten
1993
Institute of Physics Publishing (Verlag)
978-0-7503-0180-0 (ISBN)
CHF 418,95 inkl. MwSt
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Examines various aspects of semiconductor interfaces, showing how they can affect micro structures and devices such as infrared photo detectors (as used in night sights) and blue diode lasers. This book describes commercial applications for different semiconductor devices. It is suitable for those working in the area of semiconductor industry.
A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices.

Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.

Electric field induced localization in superlattices, Intersubband transitions and quantum well infrared photodetectors.. Real time spectroscopic ellipsometry monitoring of semiconductor growth and etching . X-ray reflectivity from heteroepitaxial. Spontaneous and stimulated emissions from optical microcavity structures. Radiative and nonradiative recombination in AlGaAs and InGaAsP heterostructures and some features of the corresponding quantum well laser diodes. Far-infrared cyclotron resonance of 2-dimensional electron gas in III-V semiconductor. Optics in lower dimensional quantum confined II-VI heterostructures. Growth and doping of silicon by low temperature molecular beam epitaxy. Point defects and charge traps in the Si/SiO^O2 system and related. Growth and characterization of silicon carbide polytypes for electronic.

Erscheint lt. Verlag 1.1.1993
Verlagsort London
Sprache englisch
Maße 152 x 229 mm
Themenwelt Naturwissenschaften Physik / Astronomie Angewandte Physik
Naturwissenschaften Physik / Astronomie Elektrodynamik
Naturwissenschaften Physik / Astronomie Festkörperphysik
ISBN-10 0-7503-0180-5 / 0750301805
ISBN-13 978-0-7503-0180-0 / 9780750301800
Zustand Neuware
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