Properties of Lattice-matched and Strained Indium Gallium Arsenide

Buch | Hardcover

340 Seiten

1993
Institution of Engineering and Technology (Verlag)
978-0-85296-865-9 (ISBN)

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The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Erscheint lt. Verlag	22.10.1993
Reihe/Serie	EMIS Datareviews ; No. 8
Zusatzinfo	80ill.
Verlagsort	Stevenage
Sprache	englisch
Maße	210 x 280 mm
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik
	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Technik ► Maschinenbau
ISBN-10	0-85296-865-5 / 0852968655
ISBN-13	978-0-85296-865-9 / 9780852968659
Zustand	Neuware