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Porous Silicon Science and Technology

Winter School Les Houches, 8 to 12 February 1994

Jean-Claude Vial, Jacques Derrien (Herausgeber)

Buch | Softcover

XVII, 358 Seiten

1995 | 1995
Springer Berlin (Verlag)
978-3-540-58936-5 (ISBN)

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The discovery of bright visible light emission from porous silicon has opened the door to various nanometer sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and the most prominent feature, their structures display similar properties with other highly divided materials (even non semiconductors), and then justify a multidisciplinary approach. This along with potential applications has attracted a large number of researchers followed by students to be trained. Until now international conferences have provided the exchange of information but have remained highly specialised so it was time to give thought to the organisation of topical and advanced lectures where the multidisciplinarity and the didactic approach are paramount. L'ecole des Houches was ideally devoted to that purpose. The meeting : " Luminescence of porous silicon and silicon nanostructures" was the first international school on this topic but some aspects in the organisation and the attendance have given an international workshop flavor to it. The school by itself has trained 82 "students", most of them were students starting their Ph. D thesis. 50% were French citizens and the other represented countries were Germany, England, USA, Czechoslovakia, The Netherlands, Italy, Japan, Poland, Spain, Canada, Brazil, India and Russia.

The discovery of bright visible light emission from porous silicon led to various nanometer-sized silicon structures where the confinement of carriers gives rise to interesting physical properties. The book addresses graduate students, physicists and engineers who want to learn about such optoelectronic devices, the electrochemistry of semiconductors, basic techniques, and the theory.

Lecture 1 Fundamental aspects of the semiconductor-solution interface.- Lecture 2 The silicon/electrolyte interface.- Lecture 3 Porous silicon: material processing, properties and applications.- Lecture 4 Luminescence of porous silicon after electrochemical oxidation.- Lecture 5 Mechanism for light emission from nanoscale silicon.- Lecture 6 Theory of silicon crystallites. Part II.- Lecture 7 Doping of a quantum dot and self-limiting effect in electrochemical etching.- Lecture 8 Electronic and optical properties of semiconductors quantum wells.- Lecture 9 What can be learned from time resolved measurements on porous silicon luminescence.- Lecture 10 Ion beam analysis of thin films. Applications to porous silicon.- Lecture 11 IR spectroscopy of porous silicon.- Lecture 12 Nano characterization of porous silicon by transmission electron microscopy.- Lecture 13 Electron paramagnetic resonance spectroscopy: Defect and structural analysis of solids.- Lecture 14 Raman scattering in silicon nanostructures.- Lecture 15 Scattering of X-rays.- Lecture 16 X-ray photoemission spectroscopy.- Lecture 17 Optoelectronic properties of porous silicon. The electroluminescent devices.- Lecture 18 Porous silicon luminescence under cathodic polarisation conditions.- Lecture 19 Interrelation between electrical properties and visible luminescence of porous silicon.- Lecture 20 Characteristics of porous n-type silicon obtained by photoelectrochemical etching.- Lecture 21 Porous Si: From single porous layers to porosity superlattices.

Erscheint lt. Verlag	20.3.1995
Reihe/Serie	Centre de Physique des Houches
Zusatzinfo	XVII, 358 p. 117 illus.
Verlagsort	Berlin
Sprache	englisch
Maße	170 x 244 mm
Gewicht	626 g
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
	Naturwissenschaften ► Physik / Astronomie ► Optik
	Technik ► Elektrotechnik / Energietechnik
	Technik ► Maschinenbau
Schlagworte	Chemistry • optoelectronic devices • Porous Silicon • semiconductor • Silicon • silicon nanostructures
ISBN-10	3-540-58936-8 / 3540589368
ISBN-13	978-3-540-58936-5 / 9783540589365
Zustand	Neuware