Semiconductor Devices
Springer International Publishing (Verlag)
978-3-031-45749-4 (ISBN)
This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.
lt;p>Amal Banerjee had his high school and a small part of his college education in Kolkata India. He then got admitted to the University of Texas at Austin Texas, USA, where he completed his Bachelor's and Master's degrees in Physics (with highest honors), and then transferred to the Department of Electrical and Computer Engineering at the same University where he completed a MSE (Master of Science in Engineering) and all his course work for a PhD. During his stay in the USA, he has worked as consulting engineer at a number of high technology companies as Silicon Laboratories, SMC Networks, VI Technology, Object Reservoir Inc., Microelectronics and Computer Technology Corporation, Austin Texas (MCC) etc., He has also worked as a Research Associate at Lawrence Berkeley National Laboratories, Berkeley California and Brookhaven National Laboratories, Islip New York. He is now the Engineering Manager at Analog Electronics.
Fundamental Quantum and Statistical Mechanics of Crystalline Solids.- Charge Transport(Current Flow) in Semiconductors.- Homogeneous(np|pn) and Heterogeneous(Np) Semiconductor Junction Fundamentals.- Basic Heterogeneous Bipolar|Bijunction Transistor(HBT) Properties.- Advanced VBIC and Angelov-Chalmers Models for Homogeneous|Heterogeneous Bipolar|Bijunction Transistor.- Heterogeneous Junction Field Effect Devices - Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor(HEMT).- AlGaAs-GaAs, AlGaN-GaN, SiC HEMT Large Signal Model Equivalent Electrical Circuits(Angelov Chalmers Model) - Normally On|Off HEMT, pHEMT, mHEMT and MODFET.- Homogeneous Junction Bipolar|Bijunction Transistor.- Metal Oxide Semiconductor Field Effect Transistor.- Noise in Semiconductor Devices.- Semiconductor Device Manufacturing Technologies.- Designing Transistors for Specific Applications.- Performance Characteristics of Selected Commercial Transistors and Technology Computer Aided Design(TCAD) Tools.- Semiconductor Optoelectronic Devices.- Gallium Nitride - Reigning King of Ultra High Frequency|Power Transistors.
| Erscheinungsdatum | 18.10.2023 |
|---|---|
| Reihe/Serie | Synthesis Lectures on Engineering, Science, and Technology |
| Zusatzinfo | XV, 299 p. 87 illus., 32 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 168 x 240 mm |
| Gewicht | 696 g |
| Themenwelt | Informatik ► Weitere Themen ► Hardware |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Elektrotechnik / Energietechnik | |
| Schlagworte | Gallium nitride • MOSFET • Noise in Semiconductor Devices • Semiconductor Device Manufacturing Technologies • Semiconductor optoelectronic devices |
| ISBN-10 | 3-031-45749-8 / 3031457498 |
| ISBN-13 | 978-3-031-45749-4 / 9783031457494 |
| Zustand | Neuware |
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