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Plasma Etching in Semiconductor Fabrication

(Autor)

Buch | Hardcover
316 Seiten
1985
Elsevier Science Ltd (Verlag)
978-0-444-42419-8 (ISBN)
CHF 144,80 inkl. MwSt
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This book is based on a post-graduate study carried out by the author on plasma etching mechanisms of semiconductor materials such as silicon, silicon dioxide, photoresist and aluminium films used in integrated circuit fabrication. In this book he gives an extensive review of the chemistry of dry etching, sustaining mechanisms and reactor architecture. He also describes a study made on the measurement of the electrical characteristics and ionization conditions existing in a planar reactor. In addition, practical problems such as photoresist mask erosion have been investigated and the reader will find the photoresist chemistry very useful. The book contains a great deal of practical information on plasma etching processes. The electronics industry is continually seeking ways to improve the miniaturization of devices, and this account of the author's findings should be a useful contribution to the work of miniaturization.

1. Introduction. 2. Plasma Excitation and Reactor Design. 3. Silicon and Silicon Dioxide Etching in Plasmas. 4. Aluminium Etching in Chlorinated Plasmas. 5. The Plasma Etching of III/V Compound Semiconductors. 6. Operating Frequency and the Plasma. 7. Probe Characteristics and Plasma Measurements of an Electrotech Planar Plasma Etcher. 8. The RF Voltage/Current Characteristics and Related DC Negative Bias Properties of an Electrotech Flat Bed Planar Plasma Etcher. 9. Methods of Reducing the Etch Rate of Positive Photoresist Masks During Plasma Etching. References. Subject Index.

Reihe/Serie Plasma Technology
Verlagsort Oxford
Sprache englisch
Maße 150 x 230 mm
Themenwelt Naturwissenschaften Physik / Astronomie Festkörperphysik
Naturwissenschaften Physik / Astronomie Plasmaphysik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 0-444-42419-9 / 0444424199
ISBN-13 978-0-444-42419-8 / 9780444424198
Zustand Neuware
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