Advanced Field-Effect Transistors
CRC Press (Verlag)
978-1-032-49380-0 (ISBN)
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications.
In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics:
Design and challenges in tunneling FETs
Various modeling approaches for FETs
Study of organic thin-film transistors
Biosensing applications of FETs
Implementation of memory and logic gates with FETs
The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Dharmendra Singh Yadav received the Ph.D. degree in electronics and communication engineering from the PDPM-Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India. He is currently working as Assistant Professor (Grade-I) in National Institute of Technology (NIT), Kurukshetra, Haryana India. He has more than 60 international repute publications and 4 book chapters. His current research interest includes VLSI Design: Nano-electronics Devices, Thin films transistors, Semiconductor Device, Negative Capacitance, Nanosheet FETS and circuits. Device Modeling: MOS Devices Modeling and Numerical simulation analysis of Semiconductor devices Electrical Characterization of semiconductor devices in MHz and THz frequency ranges. Circuit Design: Ultra Low Power SRAM / DRAM / RRAM based Memory Circuit Design from Devices to Array Architecture using CMOS and Advanced CMOS Devices technologies. Machine Learning in Semiconductor device/circuit-based application in research. Sukeshni Tirkey received the Ph.D. degree in electronics and communication engineering from the PDPM-Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India. She is currently working in Maulana Azad National Institute of Technology (MANIT), Bhopal, Madhya Pradesh India. She has more than 20 international publications in reputed journals/conferences. Her current research interest includes VLSI Design: Nano-electronics Devices, Thin films transistors, Semiconductor Device, Negative Capacitance, Nanosheet FETS and circuits. Shiromani Balmukund Rahi received his Ph D from the Indian Institute of Technology Kanpur, Uttar Pradesh, and did his postdoctoral research work at the Electronics Department, University Mostefa Benboulaid of Batna, Algeria and Korea Military Academy Seoul, Republic of Korea. He is working at University School of Information and Communication Technology Gautam Buddha University Greater Noida, Uttar Pradesh, India. He has published 25 journal articles, 18 book chapters and 2 proceedings. He has edited and successfully published 7 books. He is also associated for advanced research work at the Indian Institute of Technology Kanpur and the Electronics Department of the University Mostefa Benboulaid for the development of ultra-low-power devices such as TFETs, negative-capacitance (NC) TFETs, and nanosheet FETs.
1. Future Prospective beyond CMOS Technology: From Silicon-based devices to alternate devices. 2. Design and Challenges in Tunnel FET. 3. Modelling Approaches to Field Effect Transistor. 4. Dynamics of Trap States in Organic Thin-Film Transistors (OTFT’s). 5. An Insightful Study and Investigation of Tunnel FET and its Application in the Biosensing Domain. 6. Optimization of Hetero buried Oxide Pocket doped Gate engineered Tunnel FET structure. 7. Comprehensive Analysis of NC-L-TFET. 8. Thermal Behavior of Si-doped MoS2 based Step Structure DG-TFET. 9. Implementation of Logic gates using Step-Channel TFET. 10. CMOS-based SRAM with Odd Transistors Configuration: An Extensive Study. 11. Gate-All-Around Nanosheet FET device simulation methodology using Sentaurus TCAD. 12. Device Simulation process on TCAD
| Erscheinungsdatum | 28.12.2023 |
|---|---|
| Zusatzinfo | 18 Tables, black and white; 236 Line drawings, black and white; 6 Halftones, black and white; 242 Illustrations, black and white |
| Verlagsort | London |
| Sprache | englisch |
| Maße | 156 x 234 mm |
| Gewicht | 730 g |
| Themenwelt | Naturwissenschaften ► Biologie |
| Naturwissenschaften ► Physik / Astronomie ► Optik | |
| Technik ► Elektrotechnik / Energietechnik | |
| Technik ► Umwelttechnik / Biotechnologie | |
| ISBN-10 | 1-032-49380-1 / 1032493801 |
| ISBN-13 | 978-1-032-49380-0 / 9781032493800 |
| Zustand | Neuware |
| Informationen gemäß Produktsicherheitsverordnung (GPSR) | |
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