Physics Of Amorphous Semiconductors
Seiten
1999
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-02-1381-7 (ISBN)
World Scientific Publishing Co Pte Ltd (Verlag)
978-981-02-1381-7 (ISBN)
Presenting the fundamentals of amorphous semiconductors, this text includes coverage of: new preparation methods for high quality a-Si:H; chalcogenide glasses; superlattices and band-edge modulated multilayers; light-induced phenomena; and future prospects.
This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si:H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si:H, nature of weak bonds and gap states in a-Si:H, mechanisms for light-induced defect creation in a-Si:H and chalcogenides, quantum phenomena in multilayer films.
This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si:H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si:H, nature of weak bonds and gap states in a-Si:H, mechanisms for light-induced defect creation in a-Si:H and chalcogenides, quantum phenomena in multilayer films.
Glass transition; preparation and deposition processes; structure; electronic properties; electronic states, nature of conduction and valence bands and tail states, Anderson localization; transport; optical properties; gap states and defects; recombination; light-induced phenomena; thermal equilibration processes; doping; summary of specific materials; a-Si; H and its related materials; chalcogenide glasses; artificial materials - superlattices and band-edge modulated multilayers; devices; future prospects of amorphous semiconductors.
| Erscheint lt. Verlag | 4.5.1999 |
|---|---|
| Verlagsort | Singapore |
| Sprache | englisch |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| ISBN-10 | 981-02-1381-6 / 9810213816 |
| ISBN-13 | 978-981-02-1381-7 / 9789810213817 |
| Zustand | Neuware |
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