III-Nitride Semiconductors
Crc Press Inc (Verlag)
978-1-56032-972-5 (ISBN)
The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.
Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas. Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Propertiesof Semiconductors and Superlattices.
Introduction
Chapter One: Time-resolved Photoluminescence Studies of III-Nitrides
Chapter Two: Time-resolved Raman Studies of Wide bandgap Wurtzite GaN
Chapter Three: Optical Properties of InGaN Based III-Nitride Heterostructures
Chapter Four: Optical Properties of Homeopitaxial GaN
Chapter Five: Physics and Optical Properties of GaN/InGaN Quantum Wells
Chapter Six: Characterization of GaN and Related Alloys by Raman Scattering
Chapter Seven: Raman Studies of Wurtzite GaN and Related Compounds
Chapter Eight: Light Emission from Rare Earth Doped GaN
| Erscheint lt. Verlag | 28.6.2002 |
|---|---|
| Zusatzinfo | 375 Illustrations, color |
| Verlagsort | Bosa Roca |
| Sprache | englisch |
| Maße | 152 x 229 mm |
| Gewicht | 1500 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
| ISBN-10 | 1-56032-972-6 / 1560329726 |
| ISBN-13 | 978-1-56032-972-5 / 9781560329725 |
| Zustand | Neuware |
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