New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface
Springer International Publishing (Verlag)
978-3-319-81307-3 (ISBN)
The book addresses the problem ofpassivation at the surface of crystalline silicon solar cells. Morespecifically, it reports on a high-throughput, industrially compatibledeposition method for Al2O3, enabling its application to commercial solar cells.One of the main focus is on the analysis of the physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications.
Introduction.- Surface Recombination Theory.- Al2O3 Deposition and Characterisation.- Electrical Properties of the Si..Al2O3 Interface.- Influence of Deposition Parameters.-Effect of Post-Deposition Thermal Processing- Effect of Surface Dopant Concentration.- Effect of Surface Orientation and Morphology.- Relationship Between Al2O3 Bulk and Interface Properties.- Conclusion.
| Erscheinungsdatum | 20.07.2018 |
|---|---|
| Reihe/Serie | Springer Theses |
| Zusatzinfo | XXVIII, 204 p. 100 illus., 17 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 3577 g |
| Themenwelt | Naturwissenschaften ► Chemie ► Physikalische Chemie |
| Technik ► Elektrotechnik / Energietechnik | |
| Technik ► Maschinenbau | |
| Schlagworte | Aluminiumoxide Thin Films • APCVD Aluminium Oxide • Atmospheric Pressure Chemical Vapour Deposition(AP • Atmospheric Pressure Chemical Vapour Deposition(APCVD) • Crystalline Silicon Solar Cells • Deposition of Al2O3 • High-throughput Deposition Methods • Passivating Dielectrics • Passivation Performance • Recombination at p-type Surfaces • Surface Recombination Theory |
| ISBN-10 | 3-319-81307-2 / 3319813072 |
| ISBN-13 | 978-3-319-81307-3 / 9783319813073 |
| Zustand | Neuware |
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