Nanocrystals in Nonvolatile Memory
Pan Stanford Publishing Pte Ltd (Verlag)
978-981-4774-73-4 (ISBN)
This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.
Writam Banerjee is assistant professor in the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, since 2014. He completed his BSc and MSc in physics from Vidyasagar University, West Bengal, India. He received his PhD in electronic engineering from Chang Gung University, Taiwan. Dr. Banerjee has been a visiting scientist at PGI-7, Forschungszentrum Jülich GmbH, Germany, during 2012–2013 and has led its joint project with Intel Corporation, California, USA, on the development of resistive memory. He was also engaged in the development of nano-crossbar resistive random-access memory (RRAM) devices and their integration with transistors, a project in collaboration with IMEC, Belgium. He has authored and co-authored over 30 publications in reputed international journals and over 50 publications in conference proceedings. His current research interests include the novel high-k nanocrystals; design, fabrication, characterization, and analysis of RRAM, VRRAM, crossbar memory, and storage class memory; and high-density nanoscale 3D memory devices.
Nanocrystal Materials, Fabrication, and Characterizations. Modeling and Simulation of Nanocrystal Flash Memory. Charge Trapping and High-k Nanocrystal Flash Memory. Silicon Nanocrystal Flash Memory. Synthesis, Characterization and Memory Application of Germanium Nanocrystals in Dielectric Matrices. Nanographene Flash Memory. Data Recovery of Flash Memory. Nanocrystals in Resistive Random Access Memory. Measurements Aspects of Nonvolatile Memory.
| Erscheinungsdatum | 18.09.2018 |
|---|---|
| Zusatzinfo | 18 Tables, black and white; 47 Line drawings, black and white; 22 Halftones, color; 161 Halftones, black and white; 22 Illustrations, color; 208 Illustrations, black and white |
| Verlagsort | Singapore |
| Sprache | englisch |
| Maße | 152 x 229 mm |
| Gewicht | 996 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Optik |
| Technik ► Elektrotechnik / Energietechnik | |
| ISBN-10 | 981-4774-73-1 / 9814774731 |
| ISBN-13 | 978-981-4774-73-4 / 9789814774734 |
| Zustand | Neuware |
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