Defects and Properties of Semiconductors

Defect Engineering

J. Chikawa, K. Sumino, K. Wada (Herausgeber)

Buch | Hardcover

300 Seiten

1987
Kluwer Academic Publishers (Verlag)
978-90-277-2352-9 (ISBN)

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This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.

1: Compound Semiconductors.- Dislocations in GaAs Crystals.- Dislocations in GaAs Crystals Grown by As-Pressure controlled Czochralski Method.- Deep Level Photoluminescence in GaAs.- Analysis of Nonstoichiometry and Doped Inpurities in GaAs by X-Ray Quasi-Forbidden Reflection (XFR) Method.- Growth of Dislocation Free InP Single Crystals.- InP MISFETs Technology.- Characterization of Alloy Semiconductors.- Electrical Properties of DX Center in Selectively Doped AlGaAs/GaAs Heterostructure.- 2: Silicon.- Point Defects and Impurities in Silicon Crystals.- The Behavior of Point Defects in Silicon Crystals.- Point Defects and Stacking Fault Growth in Silicon.- The Characteristics of Nitrogen in Silicon Crystals.- Oxygen in Silicon.- On the Formation Process of Thermal Donors in Czochralski-Grown Silicon Crystal.- Interaction of Dislocations with Impurities in Silicon.- Author Index.

Erscheint lt. Verlag	31.3.1987
Reihe/Serie	Advances in Solid State Technology ; 3
Zusatzinfo	300 p.
Verlagsort	Dordrecht
Sprache	englisch
Themenwelt	Naturwissenschaften ► Chemie ► Analytische Chemie
	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
	Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik
ISBN-10	90-277-2352-4 / 9027723524
ISBN-13	978-90-277-2352-9 / 9789027723529
Zustand	Neuware