Toward Quantum FinFET
Springer International Publishing (Verlag)
978-3-319-34914-5 (ISBN)
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.
- Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect
- Provides the keys to understanding the emerging area of the quantum FinFET
- Written by leading experts in each research area
- Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices
| Erscheinungsdatum | 02.09.2016 |
|---|---|
| Reihe/Serie | Lecture Notes in Nanoscale Science and Technology |
| Zusatzinfo | XI, 363 p. 235 illus., 168 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Elektrotechnik / Energietechnik | |
| Schlagworte | CMOS-compatibility • Electronic devices and materials • FinFET • FinFET Quantum Mechanical Potential Modelling • FinFET Quantum Phenomena • FinFET Quantum Transport Simulation • FinFETs, Electrical Transport • FinFET Technologies, Device Variability • Fin Shape Fluctuation, FinFETs • Funneling Transport • Gate-all-around Nanowire MOSFETs • Highly Scaled SiGe/Si Core/Shell Nanowire • High Voltage FinFETs for SoC Applications • MOSFET • Mulgi-gate FinFET • Nanofabrication • nanoscale science and technology • nanotechnology • Nanotechnology and Microengineering • Nonplanar FinFet • Novel Nanoscale Transistors for Semiconductors • optical and electronic materials • other manufacturing technologies • Physics and Astronomy • Quantized Conductance 1D Transport • quantum confinement • Quantum Confinement Effect of FinFET • Quantum Dots on Graphene • Quantum FinFET and Nanotechnology • Quantum FinFET Electronics • Quantum Transport • Schottky Warp-Gate Controlled Single Electron Tran • Schottky Warp-Gate Controlled Single Electron Transistor • semiconductors • Silicon Nanowire • Single Electron Effect • Single Electron Transistor, Graphene • Work-function Variability, FinFETs |
| ISBN-10 | 3-319-34914-7 / 3319349147 |
| ISBN-13 | 978-3-319-34914-5 / 9783319349145 |
| Zustand | Neuware |
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