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Compound Semiconductor Device Modelling

X, 286 Seiten
1993
Springer Berlin (Hersteller)
978-3-540-19827-7 (ISBN)

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Focuses on the modelling and simulation of compound semiconductor devices, which form the cornerstone of modern microwave communication systems. It covers physical and equivalent models of the devices and the numerical methods to solve them, with emphasis on the key aspects of these models.
This publication focuses on the modelling and simulation of compound semiconductor devices, which form the cornerstone of modem microwave communication systems. It brings together for the first time the most popular techniques in everyday use by engineers and scientists. "Semiconductor Device Modelling" covers physical and equivalent models of the devices and the numerical methods to solve them, with special emphasis on the key aspects of these models. Due to its importance to the communications industry, solid state optoelectronic device modelling is also featured. Finally, CAD and industrial trial aspects of modelling are also discussed. The contributors in this book are internationally recognised experts, many of whom rank as leaders in their field.

Numerical Methods and their Application to Device Modelling.- MSFET ModelUng.- HEMT Modelling.- HBT Modelling.-Gunn Diode and IMPATT Diode Modelling.- Introduction to Quantum Modelling. Modelling of Distributed Feedback Laser Diodes. Equivalent Circuit Modelling.- Large-Signal Models. Noise Modelling-Monte Carlo Models and Simulations. Quasi-Two-Dimensional Models for MESFETs and HEMTs.- Application of Modelling to Microwave CAD.- Industrial Relevance of Device Modelling.

Zusatzinfo 130 figs.
Verlagsort Berlin
Sprache englisch
Gewicht 640 g
Einbandart gebunden
Themenwelt Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
ISBN-10 3-540-19827-X / 354019827X
ISBN-13 978-3-540-19827-7 / 9783540198277
Zustand Neuware
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