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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Zhiqiang Li (Autor)

Buch | Hardcover

XIV, 59 Seiten

2016 | 1st ed. 2016
Springer Berlin (Verlag)
978-3-662-49681-7 (ISBN)

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This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Dr. Li received his Bachelor degree of Science from Sichuan University in 2009, and Ph.D from Peking University in 2014 Prizes and awards: 2009-2014, Peking University Leo KoGuan Scholarship, Chenming Hu Scholarship, Merit Student, Creative Talent Award. 2005-2009, Sichuan University National Scholarship (twice), National Encouragement Scholarship, Xinyuan Scholarship (twice), Comprehensive First-class Scholarship, Excellent Student Leader. Publications: 1. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, "Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion-Implantation after Germanidation Technique," IEEE Electron Device Lett.,vol. 33, no. 12, pp. 1687-1689, Dec. 2012. 2. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, "Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation," IEEE Electron Device Lett., vol. 34, no. 5, pp. 596-598, May. 2013. 3. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Min Li, Ming Li, Xing Zhang, and Ru Huang, "Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n_/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique," IEEE Electron Device Lett., vol. 34, no. 9, pp. 1097-1099, Sep. 2013. 4. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Xing Zhang and Ru Huang, "Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film," ECS Solid State Lett., Vol. 1, no. 4, pp. Q33-Q34, 2012. 5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, "Study on Schottky Barrier Modulation of NiGe/Ge by Ion-implantation after Germanidation Technique," The 11th ICSICT, Xi'an, 2012.

Introduction.- Ge-based Schottky barrier height modulation technology.- Metal germanide technology.- Contact resistance of Ge-based devices.- Conclusions.

Erscheinungsdatum	25.04.2016
Reihe/Serie	Springer Theses
Zusatzinfo	XIV, 59 p. 52 illus., 49 illus. in color.
Verlagsort	Berlin
Sprache	englisch
Maße	155 x 235 mm
Themenwelt	Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik
Themenwelt	Technik ► Elektrotechnik / Energietechnik
Schlagworte	Contact resistance • Dopant activation • Dopant segregation • Electronic Circuits and Devices • Germanium-based MOSFET • MOS device • nanoscale science and technology • Nickel germanide • Physics and Astronomy • semiconductors • Solid state physics • Source and drain • Thermal stability
ISBN-10	3-662-49681-X / 366249681X
ISBN-13	978-3-662-49681-7 / 9783662496817
Zustand	Neuware